Manual
Document Number: 93912 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 03-Aug-10 DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com 3
GB05XP120KTPbF
Three Phase Inverter Module in MTP Package
1200 V NPT IGBT and HEXFRED
®
Diodes, 5 A
Vishay Semiconductors
Notes
(1)
T
0
, T
1
are thermistor´s temperatures
(2)
Fig. 1 - Typical Output Characteristics
T
J
= 25 °C
Fig. 2 - Typical Output Characteristics
T
J
= 125 °C
THERMISTOR SPECIFICATIONS (T CODE ONLY)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Resistance R
0
(1)
T
0
= 25 °C - 30 - k
Sensitivity index of the
thermistor material
(1)(2)
T
0
= 25 °C
T
1
= 85 °C
- 4000 - K
R
0
R
1
-------
1
T
0
------
1
T
1
------
–
exp=
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Operating junction
temperature range
T
J
- 40 - 150
°C
Storage temperature range T
Stg
- 40 - 125
Junction to case
IGBT
R
thJC
- - 2.68
°C/WDiode --4.2
Case to sink per module R
thCS
Heatsink compound thermal conductivity = 1 W/mK - 0.06 -
Mounting torque --4Nm
Weight -65- g
0246
0
5
10
15
20
Vge=18V
Vge=15V
Vge=12V
Vge=10V
Vge=8V
Ice (A)
Vce (V)
0246810
0
5
10
15
20
Vge=18V
Vge=15V
Vge=12V
Vge=10V
Vge=8V
Vce (V)
Ice (A)