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GB05XP120KTPbF Vishay Semiconductors Three Phase Inverter Module in MTP Package 1200 V NPT IGBT and HEXFRED® Diodes, 5 A FEATURES • Generation 5 NPT 1200 V IGBT technology • HEXFRED® diode with ultrasoft reverse recovery • Very low conduction and switching losses • Optional SMT thermistor (NTC) • Aluminum oxide DBC • Very low stray inductance design for high speed operation MTP • Short circuit 10 μs • Square RBSOA • Operating frequencies 8 kHz to 60 kHz • UL approved file E78996 • Compliant to RoHS direct
GB05XP120KTPbF Vishay Semiconductors Three Phase Inverter Module in MTP Package 1200 V NPT IGBT and HEXFRED® Diodes, 5 A ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL Collector to emitter breakdown voltage Temperature coefficient of V(BR)CES Collector to emitter voltage Gate threshold voltage V(BR)CES V(BR)CES/TJ VCE(on) VGE(th) Temperature coefficient of threshold voltage VGE(th)/TJ Forward transconductance gfe Collector to emitter leaking current ICES
GB05XP120KTPbF Three Phase Inverter Module in MTP Package Vishay Semiconductors 1200 V NPT IGBT and HEXFRED® Diodes, 5 A THERMISTOR SPECIFICATIONS (T CODE ONLY) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Resistance R0 (1) T0 = 25 °C - 30 - k Sensitivity index of the thermistor material (1)(2) T0 = 25 °C T1 = 85 °C - 4000 - K MIN. TYP. MAX. UNITS TJ - 40 - 150 TStg - 40 - 125 - - 2.68 - - 4.2 - 0.
GB05XP120KTPbF Vishay Semiconductors Three Phase Inverter Module in MTP Package 1200 V NPT IGBT and HEXFRED® Diodes, 5 A 20 1000 tF Vce (V) 15 Swiching Time (ns) Ice=3A Ice=6A Ice=12A 10 5 tdOFF 100 tdON 10 tR 1 0 5 10 15 20 3 6 9 12 Vge (V) Ic (A) Fig. 3 - Typical VCE vs. VGE TJ = 25 °C Fig. 6 - Typical Switching Time vs.
GB05XP120KTPbF Three Phase Inverter Module in MTP Package Vishay Semiconductors 1200 V NPT IGBT and HEXFRED® Diodes, 5 A 50 1000 40 Cies Ptot (W) Capacitance (pF) Coes 100 30 20 10 Cres 0 10 0 10 20 30 0 40 40 80 Vce (V) 120 Fig. 12 - Power Dissipation vs. Case Temperature (IGBT only) Fig. 9 - Typical Capacitance vs. VCE VGE = 0 V; f = 1 MHz 16 100 14 600V 12 10 10 20 µs Ic (A) VGE (V) 160 Tc (°C) 8 1 100 µs 6 4 0.1 1 ms DC 2 0.
GB05XP120KTPbF Vishay Semiconductors Three Phase Inverter Module in MTP Package 1200 V NPT IGBT and HEXFRED® Diodes, 5 A 50 26 Rg=4.7Ω Tj = 25°C Tj = 125°C Rg=10 Ω 21 Irr (A) Ice (A) 40 30 Rg=22Ω 16 20 11 10 Rg=47Ω 0 6 0 4 8 12 16 2 4 6 Vge (V) 8 10 12 14 16 If (A) Fig. 15 - Typical Transfer Characteristics VCE = 50 V; tp = 10 μs Fig. 17 - Typical Diode Irr vs.
GB05XP120KTPbF Three Phase Inverter Module in MTP Package Vishay Semiconductors 1200 V NPT IGBT and HEXFRED® Diodes, 5 A Thermal Response (ZthJC) 10 1 0.5 0.3 R1 R1 0.1 τJ τ1 0.05 0.1 R2 R2 τ2 τ1 τ2 R3 R3 τ3 τ3 Ci= τi/Ri Ci i/Ri 0.02 0.01 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + tc SINGLE PULSE (THERMAL RESPONSE) 0.01 1E-05 Ri (°C/W) τi (sec) 0.00037 0.660 0.001664 0.536 0.037405 1.483 1E-04 1E-03 1E-02 t1 , Rectangular Pulse Duration (sec) 1E-01 1E+00 Fig.
GB05XP120KTPbF Vishay Semiconductors Three Phase Inverter Module in MTP Package 1200 V NPT IGBT and HEXFRED® Diodes, 5 A ORDERING INFORMATION TABLE Device code GB 05 XP 120 K T PbF 1 2 3 4 5 6 7 1 - IGBT module 2 - Nominal current rating (05 = 5 A) 3 - Circuit configuration (XP = Sixpack MTP package) 4 - Voltage code (120 = 1200 V) 5 - Speed/type (K = Ultrafast IGBT/inverter motor drive application) 6 - Special option: None = No special option T = Thermistor - 7 PbF = Lead
Outline Dimensions Vishay Semiconductors MTP Ø 1.1 20.5 12 ± 0.5 2.5 4 Ø5 3.5 DIMENSIONS in millimeters 31.8 33 2 8 7 6 5 4 3 1 13 9 10 11 1.8 12 8.1 1.2 ± 0.1 7.2 ± 0.1 7.8 ± 0.1 R2.6 (x 3) 5.7 ± 0.1 11.35 ± 0.1 5.4 ± 0.1 11.35 ± 0.1 27.5 3 ± 0.1 45° 8.7 ± 0.1 R5.8 (x 2) 8.5 ± 0.1 6 ± 0.1 3 ± 0.1 39.5 ± 0.1 44.5 48.7 1.3 63.5 ± 0.
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