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GA200SA60SP Vishay High Power Products Insulated Gate Bipolar Transistor (Standard Speed IGBT), 100 A FEATURES • Standard: Optimized for minimum saturation voltage and low operating frequencies up to 1 kHz C RoHS • Lowest conduction losses available G • Very low internal inductance (5 nH typical) • Industry standard outline E SOT-227 COMPLIANT • Fully isolated package (2500 VAC) n-channel • UL pending • Completely lead (Pb)-free • Designed and qualified for industrial level PRODUCT SUMMARY BENE
GA200SA60SP Vishay High Power Products Insulated Gate Bipolar Transistor (Standard Speed IGBT), 100 A ELECTRICAL CHARACTERISTICS (TJ = 25 °C unless otherwise noted) PARAMETER SYMBOL Collector to emitter breakdown voltage V(BR)CES Emitter to collector breakdown voltage V(BR)ECS (1) Temperature coeff. of breakdown voltage ΔV(BR)CES/ΔTJ TEST CONDITIONS MIN. TYP. MAX. VGE = 0 V, IC = 250 µA 600 - - VGE = 0 V, IC = 1.0 A 18 - - - 0.62 - VGE = 0 V, IC = 1.0 mA - 1.10 1.3 - 1.
GA200SA60SP Insulated Gate Bipolar Transistor Vishay High Power Products (Standard Speed IGBT), 100 A 250 For both: Triangular wave: Duty cycle: 50 % I TJ = 125 °C Tsink = 90 °C Clamp voltage: Gate drive as specified 80 % of rated Power dissipation = 140 W Load Current (A) 200 150 Square wave: 60 % of rated voltage 100 I 50 Ideal diodes 0 1 0.1 10 100 f - Frequency (kHz) Maximum DC Collector Current (A) 1000 TJ = 150 °C 100 TJ = 25 °C 10 VGE = 15 V 20 µs pulse width 1 0.5 1.0 1.5 2.
GA200SA60SP Vishay High Power Products Insulated Gate Bipolar Transistor (Standard Speed IGBT), 100 A ZthJC - Thermal Response 1 0.1 PDM D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 0.01 Single pulse (thermal resistance) 0.001 0.00001 0.0001 0.001 t1 t2 Notes: 1. Duty factor D = t1/t2 2. Peak TJ = PDM x ZthJC + TC 0.01 0.1 1 t1 - Rectangular Pulse Duration (s) Fig.
GA200SA60SP Insulated Gate Bipolar Transistor Vishay High Power Products (Standard Speed IGBT), 100 A 1000 RG = 2.0 Ω TJ = 150 °C VCC = 480 V VGE = 15 V 120 IC - Collector Current (A) Total Switching Losses (mJ) 160 80 40 VGE = 20 V TJ = 125 °C 100 10 Safe operating area 0 100 1 150 200 250 300 350 1 10 100 1000 IC - Collector Current (A) VCE - Collector to Emitter Voltage (V) Fig. 11 - Typical Switching Losses vs. Collector Current Fig. 14 - Turn-Off SOA L D.U.T.
GA200SA60SP Vishay High Power Products Insulated Gate Bipolar Transistor (Standard Speed IGBT), 100 A 1 2 90 % 10 % 3 VC 90 % td (off) 10 % 5% IC tf tr td (on) t = 5 µs Eoff Eon Ets = (Eon + Eoff) Fig.
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