Manual

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Document Number: 94362
2 Revision: 29-Apr-08
GA200HS60S1PbF
Vishay High Power Products
"Half-Bridge" IGBT INT-A-PAK
(Standard Speed IGBT), 200 A
Fig. 1 - Typical Output Characteristics Fig. 2 - Typical Transfer Characteristics
SWITCHING CHARACTERISTICS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Total gate charge Q
g
I
C
= 200 A
V
CC
= 400 V
V
GE
= 15 V
- 1600 1700
nCGate to emitter charge Q
ge
- 260 340
Gate to collector charge Q
gc
- 580 670
Turn-on switching loss E
on
I
C
= 200 A, V
CC
= 480 V, V
GE
= 15 V
R
G
= 10 Ω
Freewheeling diode: 30EPH06
-30-
mJTurn-off switching loss E
off
-50-
Total switching loss E
ts
-80-
Turn-on switching loss E
on
I
C
= 200 A, V
CC
= 480 V, V
GE
= 15 V
R
G
= 10 Ω
Freewheeling diode: 30EPH06, T
J
= 125 °C
-34-
mJTurn-off switching loss E
off
-104-
Total switching loss E
ts
- 138 151
Input capacitance C
ies
V
GE
= 0 V
V
CC
= 30 V
f = 1.0 MHz
- 32 500 -
pFOutput capacitance C
oes
-2080-
Reverse transfer capacitance C
res
-380-
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL MIN. TYP. MAX. UNITS
Operating junction temperature range T
J
- 40 - 150
°C
Storage temperature range T
Stg
- 40 - 125
Junction to case per leg R
thJC
- - 0.15
°C/W
Case to sink R
thCS
-0.1-
Mounting torque
case to heatsink - - 4
Nm
case to terminal 1, 2, 3 - - 3
Weight - 185 - g
10
100
1000
0.6
0.8
1.0
1.2 1.4
1.6
V
CE
- Collector to Emitter Voltage (V)
I
C
- Collector to Emitter Current (A)
T
J
= 25 °C
V
GE
= 15 V
500 µs pulse width
T
J
= 125 °C
1000
100
10
1
4.0
4.5
5.0 5.5 6.0 6.5 7.0 7.5
V
GE
- Gate to Emitter Voltage (V)
I
C
- Collector to Emitter Current (A)
T
J
= 125 °C
T
J
= 25 °C