Instruction Manual

Document Number: 94486 For technical questions, contact: [e-mail]
www.vishay.com
Revision: 01-Sep-08 7
CPV363M4UPbF
IGBT SIP Module
(Ultrafast IGBT)
Vishay High Power Products
Fig. 14 - Typical Reverse Recovery Time vs. dI
F
/dt
Fig. 15 - Typical Recovery Current vs. dI
F
/dt
Fig. 16 - Typical Stored Charge vs. dI
F
/dt
Fig. 17 - Typical dI
(rec)M
/dt vs dI
F
/dt
0
40
80
120
160
0001001
f
di /dt - (A/µs)
t - (ns)
rr
I = 24A
I = 12A
I = 6.0A
F
F
F
V = 200V
T = 125°C
T = 25°C
R
J
J
1
10
100
0001001
f
di /dt - (A/µs)
I - (A)
IRRM
I = 6.0A
I = 12A
I = 24A
F
F
F
V = 200V
T = 125°C
T = 25°C
R
J
J
0
200
400
600
0001001
f
di /dt - (A/µs)
RR
Q - (nC)
I = 6.0A
I = 12A
I = 24A
V = 200V
T = 125°C
T = 25°C
R
J
J
F
F
F
10
100
1000
10000
0001001
f
di /dt - (A/µs)
di(rec)M/dt - (A/µs)
I = 12A
I = 24A
I = 6.0A
F
F
F
V = 200V
T = 125°C
T = 25°C
R
J
J