Instruction Manual

Document Number: 94486 For technical questions, contact: [e-mail]
www.vishay.com
Revision: 01-Sep-08 3
CPV363M4UPbF
IGBT SIP Module
(Ultrafast IGBT)
Vishay High Power Products
SWITCHING CHARACTERISTICS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Total gate charge (turn-on) Q
g
I
C
= 6.8 A
V
CC
= 400 V
See fig. 8
-5379
nCGate to emitter charge (turn-on) Q
ge
-7.712
Gate to collector charge (turn-on) Q
gc
-2131
Turn-on delay time t
d(on)
T
J
= 25 °C
I
C
= 6.8 A, V
CC
= 480 V
V
GE
= 15 V, R
G
= 23 Ω
Energy losses include “tail” and diode
reverse recovery.
See fig. 9, 10, 11, 18
-43-
ns
Rise time t
r
-14-
Turn-off delay time t
d(off)
-95140
Fall time t
f
-83190
Turn-on switching loss E
on
-0.17-
mJTurn-off switching loss E
off
-0.15-
Total switching loss E
ts
- 0.32 0.45
Turn-on delay time t
d(on)
T
J
= 150 °C
I
C
= 6.8 A, V
CC
= 480 V
V
GE
= 15 V, R
G
= 23 Ω
Energy losses include “tail” and
diode reverse recovery
See fig. 9, 10, 11, 18
-41-
ns
Rise time t
r
-16-
Turn-off delay time t
d(off)
- 110 -
Fall time t
f
- 230 -
Total switching loss E
ts
-0.52-mJ
Input capacitance C
ies
V
GE
= 0 V
V
CC
= 30 V
ƒ = 1.0 MHz
See fig. 7
- 1100 -
pFOutput capacitance C
oes
-73-
Reverse transfer capacitance C
res
-14-
Diode reverse recovery time t
rr
T
J
= 25 °C
See fig. 14
I
F
= 12 A
V
R
= 200 V
dI/dt = 200 A/µs
-4260
ns
T
J
= 125 °C - 83 120
Diode peak reverse recovery charge I
rr
T
J
= 25 °C
See fig. 15
-3.56.0
A
T
J
= 125 °C - 5.6 10
Diode reverse recovery charge Q
rr
T
J
= 25 °C
See fig. 16
-80180
nC
T
J
= 125 °C - 220 600
Diode peak rate of fall of recovery
during t
b
dI
(rec)M
/dt
T
J
= 25 °C
See fig. 17
- 180 -
A/µs
T
J
= 125 °C - 116 -