Instruction Manual

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Document Number: 94486
2 Revision: 01-Sep-08
CPV363M4UPbF
Vishay High Power Products
IGBT SIP Module
(Ultrafast IGBT)
Notes
(1)
Pulse width ≤ 80 µs, duty factor ≤ 0.1 %
(2)
Pulse width 5.0 µs; single shot
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TYP. MAX. UNITS
Junction to case, each IGBT, one IGBT in conduction R
thJC
(IGBT) - 3.5
°C/WJunction to case, each DIODE, one DIODE in conduction R
thJC
(DIODE) - 5.5
Case to sink, flat, greased surface R
thCS
(MODULE) 0.10 -
Weight of module
20 - g
0.7 - oz.
ELECTRICAL SPECIFICATIONS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Collector to emitter breakdown voltage V
(BR)CES
(1)
V
GE
= 0 V, I
C
= 250 µA 600 - - V
Temperature coeff. of breakdown voltage ΔV
(BR)CES
/ΔT
J
V
GE
= 0 V, I
C
= 1.0 mA - 0.63 - V/°C
Collector to emitter saturation voltage V
CE(on)
I
C
= 6.8 A
V
GE
= 15 V
See fig. 2, 5
-1.702.2
V
I
C
= 13 A - 2.00 -
I
C
= 6.8 A, T
J
= 150 °C - 1.70 -
Gate threshold voltage V
GE(th)
V
CE
= V
GE
, I
C
= 250 µA
3.0 - 6.0
Temperature coeff. of threshold voltage ΔV
GE(th)
/ΔT
J
-- 11-mV/°C
Forward transconductance g
fe
(2)
V
CE
= 100 V, I
C
= 6.8 A 4.0 6.0 - S
Zero gate voltage collector current I
CES
V
GE
= 0 V, V
CE
= 600 V - - 250
µA
V
GE
= 0 V, V
CE
= 600 V, T
J
= 150 °C - - 2500
Diode forward voltage drop V
FM
I
C
= 12 A
See fig. 13
-1.41.7
V
I
C
= 12 A, T
J
= 150 °C - 1.3 1.6
Gate to emitter leakage current I
GES
V
GE
= ± 20 V - - ± 100 nA