User Manual

Document Number: 94483 For technical questions, contact: [e-mail]
www.vishay.com
Revision: 01-Sep-08 7
CPV362M4UPbF
IGBT SIP Module
(Fast IGBT)
Vishay High Power Products
Fig. 14 - Typical Reverse Recovery Time vs. dI
F
/dt
Fig. 15 - Typical Recovery Current vs. dI
F
/dt
Fig. 16 - Typical Stored Charge vs. dI
F
/dt
Fig. 17 - Typical dI
(rec)M
/dt vs. dI
F
/dt
0
20
40
60
80
100
0001001
f
di /dt - (A/μs)
t - (ns)
rr
I = 16A
I = 8.0A
I = 4.0A
F
F
F
V = 200V
T = 125°C
T = 25°C
R
J
J
1
10
100
0001001
f
di /dt - (A/μs)
I - (A)
IRRM
I = 16A
I = 8.0A
I = 4.0A
F
F
F
V = 200V
T = 125°C
T = 25°C
R
J
J
0
100
200
300
400
500
0001001
f
di /dt - (A/μs)
RR
Q - (nC)
I = 16A
I = 8.0A
I = 4.0A
F
F
F
V = 200V
T = 125°C
T = 25°C
R
J
J
100
1000
10000
0001001
f
di /dt - (A/μs)
di(rec)M/dt - (A/μs)
I = 16A
I = 8.0A
I = 4.0A
F
F
F
V = 200V
T = 125°C
T = 25°C
R
J
J