User Manual

Document Number: 94483 For technical questions, contact: [e-mail]
www.vishay.com
Revision: 01-Sep-08 5
CPV362M4UPbF
IGBT SIP Module
(Fast IGBT)
Vishay High Power Products
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction to Case
Fig. 7 - Typical Capacitance vs.
Collector to Emitter Voltage
Fig. 8 - Typical Gate Charge vs.
Gate to Emitter Voltage
Fig. 9 - Typical Switching Losses vs. Gate Resistance
Fig. 10 - Typical Switching Losses vs. Junction Temperature
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10
t , Rectangular Pulse Duration (sec)
1
thJC
D = 0.50
0.01
0.02
0.05
0.10
0.20
SINGLE PULSE
(THERMAL RESPONSE)
Thermal Response (Z )
P
t
2
1
t
DM
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
1
2
J
DM
thJC C
0
200
400
600
800
1000
001011
CE
C, Capacitance (pF)
V , Collector-to-Emitter Voltage (V)
A
V = 0V, f = 1MHz
C = C + C , C SHORTED
C = C
C = C + C
GE
ies ge gc ce
res gc
oes ce gc
C
ies
C
res
C
oes
0 10 20 30 40
0
4
8
12
16
20
Q , Total Gate Charge (nC)
V , Gate-to-Emitter Voltage (V)
G
GE
V = 400V
I = 3.9A
CC
C
0 10 20 30 40 50
0.15
0.16
0.17
0.18
0.19
0.20
R , Gate Resistance
Total Switching Losses (mJ)
G
V = 480V
V = 15V
T = 25 C
I = 3.9A
CC
GE
J
C
°
(Ω)
-60 -40 -20 0 20 40 60 80 100 120 140 160
0.1
1
T , Junction Temperature ( C )
Total Switching Losses (mJ)
J
°
R = 50
V = 15V
V = 480V
G
GE
CC
I = A
7.8
C
I = A
3.9
C
I = A
1.95
C
Ω