User Manual

Document Number: 94483 For technical questions, contact: [e-mail]
www.vishay.com
Revision: 01-Sep-08 3
CPV362M4UPbF
IGBT SIP Module
(Fast IGBT)
Vishay High Power Products
SWITCHING CHARACTERISTICS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Total gate charge (turn-on) O
g
I
C
= 3.9 A
V
CC
= 400 V
V
GE
= 15 V
-3147
nCGate to emitter charge (turn-on) O
GE
-5.07.5
Gate to collector charge (turn-on) O
gc
-1320
Turn-on delay time t
d(on)
T
J
= 25 °C
I
C
= 3.9 A, V
CC
= 480 V
V
GE
= 15 V, R
G
= 50 Ω
Energy losses include “tail” and diode
reverse recovery
See fig. 9, 10, 11, 18
-45-
ns
Rise time t
r
-22-
Turn-off delay time t
d(off)
- 100 160
Fall time t
f
- 120 180
Turn-on switching loss E
on
-0.13-
mJTurn-off switching loss E
off
-0.07-
Total switching loss E
ts
- 0.20 0.3
Turn-on delay time t
d(on)
T
J
= 150 °C
I
C
= 3.9 A, V
CC
= 480 V
V
GE
= 15 V, R
G
= 50 Ω
Energy losses include “tail” and diode
reverse recovery
See fig. 9, 10, 11, 18
-42-
ns
Rise time t
r
-22-
Turn-off delay time t
d(off)
- 120 -
Fall time t
f
- 250 -
Total switching loss E
ts
-0.35- mJ
Input capacitance C
ies
V
GE
= 0 V
V
CC
= 30 V
ƒ = 1.0 MHz
See fig. 7
- 530 -
pFOutput capacitance C
oes
-39-
Reverse transfer capacitance C
res
-7.4-
Diode reverse recovery time t
rr
T
J
= 25 °C
See fig. 14
I
F
= 8.0 A
V
R
= 200 V
dI/dt = 200 A/µs
-3755
ns
T
J
= 125 °C - 55 90
Diode peak reverse recovery current I
rr
T
J
= 25 °C
See fig. 15
-3.55.0
A
T
J
= 125 °C - 4.5 8.0
Diode reverse recovery charge Q
rr
T
J
= 25 °C
See fig. 16
- 65 138
nC
T
J
= 125 °C - 124 360
Diode peak rate of fall of
recovery during t
b
dI
(rec)M
/dt
T
J
= 25 °C
See fig. 17
- 240 -
A/µs
T
J
= 125 °C - 210 -