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CPV362M4UPbF Vishay High Power Products IGBT SIP Module (Fast IGBT) FEATURES • Fully isolated printed circuit board mount package • Switching-loss rating includes all “tail” losses RoHS • HEXFRED® soft ultrafast diodes COMPLIANT • Optimized for high speed over 5 kHz See fig. 1 for current vs. frequency curve • Totally lead (Pb)-free IMS-2 • Designed and qualified for industrial level PRODUCT SUMMARY OUTPUT CURRENT IN A TYPICAL 20 kHz MOTOR DRIVE IRMS per phase (3.1 kW total) with TC = 90 °C 4.
CPV362M4UPbF Vishay High Power Products IGBT SIP Module (Fast IGBT) THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER Junction to case, each IGBT, one IGBT in conduction Junction to case, each DIODE, one DIODE on conduction Case to sink, flat, greased surface SYMBOL TYP. MAX. RthJC (IGBT) - 5.5 RthJC (DIODE) - 9.0 RthCS (MODULE) 0.1 - UNITS °C/W 20 g 0.7 oz.
CPV362M4UPbF IGBT SIP Module (Fast IGBT) Vishay High Power Products SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER Total gate charge (turn-on) SYMBOL Og Gate to emitter charge (turn-on) OGE Gate to collector charge (turn-on) Ogc Turn-on delay time td(on) Rise time Turn-off delay time Fall time tr td(off) tf Turn-on switching loss Eon Turn-off switching loss Eoff Total switching loss Ets Turn-on delay time td(on) Rise time Turn-off delay time Fall time tr td(
CPV362M4UPbF IGBT SIP Module (Fast IGBT) Vishay High Power Products 8 LOAD CURRENT (A) 7 6 2.05 1.76 5 1.46 4 1.17 3 0.88 2 0.59 1 0.29 Total Output Power (kW) 2.34 Tc = 90°C Tj = 125°C Power Factor = 0.8 Modulation Depth = 1.15 Vcc = 50% of Rated Voltage 0.00 0 0.1 1 10 100 f, Frequency (KHz) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of Fundamental) 8 10 TJ = 150°C TJ = 25°C 1 VGE = 15V 20μs PULSE WIDTH A 0.1 0.
CPV362M4UPbF IGBT SIP Module (Fast IGBT) Vishay High Power Products Thermal Response (Z thJC ) 10 D = 0.50 0.20 1 0.10 0.05 0.02 0.01 PDM 0.1 t 1 t SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t 1 2 / t2 2. Peak TJ = P DM x Z thJC + T C 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 t 1 , Rectangular Pulse Duration (sec) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction to Case 0.
CPV362M4UPbF IGBT SIP Module (Fast IGBT) Vishay High Power Products RG TJ VCC 0.6 VGE 100 = 50 Ω = 150 °C = 480V = 15V I C , Collector-to-Emitter Current (A) Total Switching Losses (mJ) 0.8 0.5 0.3 0.2 0.0 VGE = 20V T J = 125 oC 10 1 SAFE OPERATING AREA 0 2 4 6 0.1 8 1 I C , Collector-to-emitter Current (A) 10 100 1000 VCE , Collector-to-Emitter Voltage (V) Fig. 11 - Typical Switching Losses vs. Collector to Emitter Current Fig.
CPV362M4UPbF IGBT SIP Module (Fast IGBT) Vishay High Power Products 100 500 VR = 200V TJ = 125°C TJ = 25°C VR = 200V TJ = 125°C TJ = 25°C 80 400 IF = 8.0A 40 Q RR - (nC) t rr - (ns) IF = 16A 60 300 I F = 16A 200 I F = 8.0A I F = 4.0A 20 100 IF = 4.0A 0 100 di f /dt - (A/μs) 0 100 1000 Fig. 14 - Typical Reverse Recovery Time vs. dIF/dt 100 10000 VR = 200V TJ = 125°C TJ = 25°C VR = 200V TJ = 125°C TJ = 25°C di(rec)M/dt - (A/μs) I IRRM - (A) 1000 di f /dt - (A/μs) Fig.
CPV362M4UPbF Vishay High Power Products IGBT SIP Module (Fast IGBT) GATE VOLTAGE D.U.T. 10% +Vg +Vg Same type device as D.U.T. DUT VOLTAGE AND CURRENT Vce 80 % of VCE 430 µF 10% Ic Vcc Ipk 90% Ic Ic D.U.T. 5% Vce tr td(on) t2 Eon = Vce VceieIedt dt t1 ∫ t1 Fig. 18a - Test Circuit for Measurement of ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf t2 Fig. 18c - Test Waveforms for Circuit of Fig.
CPV362M4UPbF IGBT SIP Module (Fast IGBT) Vishay High Power Products Vg GATE SIGNAL DEVICE UNDER TEST CURRENT D.U.T. VOLTAGE IN D.U.T. CURRENT IN D1 t0 t1 t2 Fig. 18e - Macro Waveforms for Fig. 18a´s Test Circuit D.U.T. L 1000V RL= Vc* 0 - 480V 480V 4 X IC @25°C 50V 6000μF 100V Fig. 19 - Clamped Inductive Load Test Circuit Fig.
Outline Dimensions Vishay High Power Products IMS-2 (SIP) DIMENSIONS in millimeters (inches) Case Outline - IMS-2 Ø 3.91 (0.154) 2x 62.43 (2.458) 7.87 (0.310) 53.85 (2.120) 5.46 (0.215) 21.97 (0.865) 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 0.38 (0.015) 3.94 (0.155) 1.27 (0.050) 4.06 ± 0.51 (0.160 ± 0.020) 5.08 (0.200) 6x 1.27 (0.050) 13 x 2.54 (0.100) 6x 3.05 ± 0.38 (0.120 ± 0.015) 0.76 (0.030) 13 x 0.51 (0.020) 6.10 (0.
Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product.