Manual

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Document Number: 94361
2 Revision: 29-Apr-08
CPV362M4FPbF
Vishay High Power Products
IGBT SIP Module
(Fast IGBT)
ELECTRICAL CHARACTERISTICS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Collector to emitter breakdown voltage V
(BR)CES
V
GE
= 0 V, I
C
= 250 µA
Pulse width ≤ 80 µs, duty factor ≤ 0.1 %
600 - - V
Temperature coeff. of breakdown voltage ΔV
(BR)CES
/ΔT
J
V
GE
= 0 V, I
C
= 1.0 mA - 0.72 - V/°C
Collector to emitter saturation voltage V
CE(on)
I
C
= 4.8 A
V
GE
= 15 V
See fig. 2, 5
- 1.41 1.7
V
I
C
= 8.8 A - 1.66 -
I
C
= 4.8 A, T
J
= 150 °C - 1.42 -
Gate threshold voltage V
GE(th)
V
CE
= V
GE
, I
C
= 250 µA 3.0 - 6.0
Gate to emitter leakage current I
GES
V
GE
= ± 20 V - - ± 100 nA
Temperature coeff. of threshold voltage ΔV
GE(th)
/ΔT
J
V
GE
= 0 V, I
C
= 1.0 mA - -11 - mV/°C
Forward transconductance g
fe
V
CE
= 100 V, I
C
= 4.8 A
Pulse width 5.0 µs; single shot
2.9 5.0 - S
Zero gate voltage collector current I
CES
V
GE
= 0 V, V
CE
= 600 V -
-
250
µA
V
GE
= 0 V, V
CE
= 600 V, T
J
= 150 °C - - 1700
Diode forward voltage drop V
FM
I
C
= 8.0 A
I
C
= 8.0 A, T
J
= 150 °C
See fig. 13
-1.41.7
V
-1.31.6
SWITCHING CHARACTERISTICS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Total gate charge (turn on) Q
g
I
C
= 4.8 A
V
CC
= 400 V
See fig. 8
-3045
nCGate to emitter charge (turn on) Q
ge
-4.06.0
Gate to collector charge Q
gc
-1320
Turn-on delay time t
d(on)
T
J
= 25 °C
I
C
= 4.8 A, V
CC
= 480 V
V
GE
= 15 V, R
G
= 50 Ω
Energy losses include “tail” and diode
reversev recovery.
See fig. 9, 10, 18
-49-
ns
Rise time t
r
-22-
Turn-off delay time t
d(off)
- 200 300
Fall time t
f
- 214 320
Turn-on switching loss E
on
-0.23-
mJTurn-off switching loss E
off
-0.33-
Total switching loss E
ts
-0.450.70
Turn-on delay time t
d(on)
T
J
= 150 °C,
I
C
= 4.8 A, V
CC
= 480 V
V
GE
= 15 V, R
G
= 50 Ω
Energy losses include “tail” and
diode reverse recovery
See fig. 10, 11, 18
-48-
ns
Rise time t
r
-25-
Turn-off delay time t
d(off)
-435-
Fall time t
f
-364-
Total switching loss E
ts
-0.93- mJ
Input capacitance C
ies
V
GE
= 0 V
V
CC
= 30 V
See fig. 7
-340-
pFOutput capacitance C
oes
-63-
Reverse transfer capacitance C
res
-5.9-
Diode reverse recovery time t
rr
T
J
= 25 °C
See fig. 14
I
F
= 8.0 A
V
R
= 200 V
dI/dt = 200 A/µs
-3755
ns
T
J
= 125 °C - 55 90
Diode peak reverse recovery current I
rr
T
J
= 25 °C
See fig. 15
-3.550
A
T
J
= 125 °C - 4.5 8.0
Diode reverse recovery charge Q
rr
T
J
= 25 °C
See fig. 16
- 65 138
nC
T
J
= 125 °C - 124 360
Diode peak rate of fall of recovery during t
b
dI
(rec)M
/dt
T
J
= 25 °C
See fig. 17
-240-
A/µs
T
J
= 125 °C - 210 -