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CPV362M4FPbF Vishay High Power Products IGBT SIP Module (Fast IGBT) FEATURES • • • • Fully isolated printed circuit board mount package Switching-loss rating includes all “tail” losses HEXFRED® soft ultrafast diodes Optimized for medium operating (1 to 10 kHz) See fig. 1 for current vs.
CPV362M4FPbF IGBT SIP Module (Fast IGBT) Vishay High Power Products ELECTRICAL CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL Collector to emitter breakdown voltage V(BR)CES Temperature coeff. of breakdown voltage Collector to emitter saturation voltage ΔV(BR)CES /ΔTJ VCE(on) Gate threshold voltage VGE(th) Gate to emitter leakage current IGES ΔVGE(th) /ΔTJ Temperature coeff.
CPV362M4FPbF IGBT SIP Module (Fast IGBT) Vishay High Power Products 9 2.63 7 Load Current (A) 2.34 TC = 90 °C TJ = 125 °C Power factor = 0.8 Modulation depth = 1.15 VCC = 50 % of rated voltage 6 2.05 1.75 5 1.46 4 1.17 3 0.88 2 0.58 1 0.29 0 0.1 1 Total Output Power (kW) 8 0.00 100 10 f - Frequency (kHz) 100 Maximum DC Collector Current (A) IC - Collector to Ermitter Current (A) Fig. 1 - Typical Load Current vs.
CPV362M4FPbF IGBT SIP Module (Fast IGBT) Vishay High Power Products ZthJC - Thermal Impedance 10 1 PDM D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 0.1 Single pulse (thermal response) 0.01 0.00001 0.0001 0.001 t1 t2 Notes: 1. Duty factor D = t1/t2 2. Peak TJ = PDM x ZthJC + TC 0.01 0.1 1 10 t1 - Rectangular Pulse Duration (s) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction to Case 0.
CPV362M4FPbF IGBT SIP Module (Fast IGBT) 100 RG = 50 Ω TJ = 150 °C VCC = 480 V VGE = 15 V 1.5 VR = 200 V TJ = 125 °C TJ = 25 °C 80 IF = 16 A trr (ns) Total Switching Losses (mJ) 2.0 Vishay High Power Products 1.0 60 IF = 8.0 A 40 IF = 4.0 A 0.5 20 0 100 0.0 0 2 4 6 8 10 1000 IC - Collector to Emitter Current (A) dIF/dt (A/µs) 100 100 VGE = 20 V TJ = 125 °C IIRRM - (A) VR = 200 V TJ = 125 °C TJ = 25 °C Safe operating area 10 IF = 16 A IF = 8.0 A 10 IF = 4.
CPV362M4FPbF Vishay High Power Products IGBT SIP Module (Fast IGBT) 10 000 dI(rec)M/dt - (A/µs) VR = 200 V TJ = 125 °C TJ = 25 °C Gate voltage D.U.T. 10 % + VG + VG IF = 4.0 A 1000 D.U.T. voltage and current Vce IF = 8.0 A VCC IF = 16 A 10 % IC Ipk 90 % IC 5 % VCE tr td(on) IC ∫ Eon = 100 100 1000 t1 t2 VCE IC dt t1 t2 dIF/dt - (A/µs) Fig. 17 - Typical dI(REC)M/dt vs dIF/dt Fig. 18c - Test Waveforms of Circuit of Fig. 18a, Defining Eon, td(on), tr trr IC Same type device as D.U.
CPV362M4FPbF IGBT SIP Module (Fast IGBT) L RL= D.U.T. 1000 V 50 V Vishay High Power Products VC* 0 - 480 V 480 V 4 x IC at 25 °C 6000 µF 100 V Fig. 19 - Clamped Inductive Load Test Circuit Fig. 20 - Pulsed Collector Current Test Circuit CIRCUIT CONFIGURATION 1 D3 D1 3 Q1 9 Q3 12 7 16 D4 D2 Q2 Q5 10 4 6 D5 15 Q4 D6 18 13 Q6 19 LINKS TO RELATED DOCUMENTS Dimensions Document Number: 94361 Revision: 29-Apr-08 http://www.vishay.
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