Owner manual

Mar. 2003
MITSUBISHI HVIGBT MODULES
CM800HB-50H
HIGH POWER SWITCHING USE
INSULATED TYPE
2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
7
5
3
2
710
2
10
0
7
23 5710
3
23 5
5
5
3
2
10
1
5
7
5
3
2
710
2
10
–1
7
23 5710
3
23 5
5
5
3
2
10
0
5
t d(off)
V CC = 1250V, V GE = ±15V
R
G = 2.5Ω, T j = 125°C
Inductive load
t d(on)
t r
t f
V CC = 1250V, T j = 125°C
Inductive load
V
GE = ±15V, R G = 2.5Ω
t rr
I rr
7
5
3
2
10
2
7
5
5
3
2
10
3
10
–2
10
–3
10
–2
10
–1
10
0
7
5
3
2
10
–1
7
5
3
2
10
0
10
1
7
5
3
2
23 57 23 57 23 57
Single Pulse
T
C = 25°C
R
th(j – c)Q = 0.012K/W
R
th(j – c)R = 0.024K/W
20
16
12
8
4
0
8000 1000060000 2000 4000
V CC = 1250V
I
C = 800A
HALF-BRIDGE
SWITCHING TIME CHARACTERISTICS
(
TYPICAL
)
SWITCHING TIMES
(
µs
)
COLLECTOR CURRENT I C
(
A
)
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE
(
TYPICAL
)
REVERSE RECOVERY TIME t
rr
(
µs
)
EMITTER CURRENT I E
(
A
)
REVERSE RECOVERY CURRENT I
rr
(
A
)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
NORMALIZED TRANSIENT
THERMAL IMPEDANCE Z
th(j – c)
TIME
(
s
)
GATE CHARGE CHARACTERISTICS
(
TYPICAL
)
GATE-EMITTER VOLTAGE V
GE
(
V
)
GATE CHARGE Q G
(
nC
)
3.0
2.5
2.0
1.5
1.0
0.5
0
0 5 10 15 20 3025
GATE RESISTANCE
(
Ω
)
HALF-BRIDGE
SWITCHING ENERGY CHARACTERISTICS
(
TYPICAL
)
SWITCHING ENERGY
(
J/P
)
0
0.5
1.0
1.5
2.0
0 400 800 16001200
HALF-BRIDGE
SWITCHING ENERGY CHARACTERISTICS
(
TYPICAL
)
CURRENT
(
A
)
SWITCHING ENERGY
(
J/P
)
V CC = 1250V, V GE = ±15V,
R
G = 2.5Ω, Tj = 125°C,
Inductive load
E on
E rec
E off