Owner manual

Mar. 2003
MITSUBISHI HVIGBT MODULES
CM800HB-50H
HIGH POWER SWITCHING USE
INSULATED TYPE
2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
PERFORMANCE CURVES
COLLECTOR CURRENT I
C
(
A
)
800
400
0
100
246
1200
8
1600
T j =25°C
V GE =13V
V GE =12V
V GE =11V
V GE =10V
V GE =9V
V GE =8V
V GE =7V
V GE =14V
V GE =15V
V GE =20V
0
1
2
3
4
5
0
400 800 1200 1600
V GE =15V
T j = 25°C
T
j = 125°C
1600
800
400
0
1200
200481216
V CE =10V
T j = 25°C
T
j = 125°C
020161284
10
8
6
4
2
0
COLLECTOR-EMITTER
SATURATION VOLTAGE V
CE(sat)
(
V
)
T j = 25°C
I C = 1600A
I C = 800A
I C = 320A
10
1
2310
–1
5710
0
23 5710
1
23 5710
2
10
3
7
5
3
2
10
2
7
5
3
2
7
5
3
2
10
0
CAPACITANCE C
ies
, C
oes
, C
res
(
nF
)
C ies
C oes
C res
V GE = 0V, T j = 25°C
C
ies, C oes : f = 100kHz
C
res
: f = 1MHz
CAPACITANCE CHARACTERISTICS
(
TYPICAL
)
CAPACITANCE C
ies
, C
oes
, C
res
(
nF
)
COLLECTOR-EMITTER VOLTAGE V CE
(
V
)
OUTPUT CHARACTERISTICS
(
TYPICAL
)
COLLECTOR CURRENT I
C
(
A
)
TRANSFER CHARACTERISTICS
(
TYPICAL
)
COLLECTOR CURRENT I
C
(
A
)
GATE-EMITTER VOLTAGE V GE
(
V
)
COLLECTOR-EMITTER
SATURATION VOLTAGE V
CE(sat)
(
V
)
COLLECTOR CURRENT I C
(
A
)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(
TYPICAL
)
COLLECTOR-EMITTER VOLTAGE V
CE
(
V
)
COLLECTOR-EMITTER
SATURATION VOLTAGE V
CE(sat)
(
V
)
GATE-EMITTER VOLTAGE V GE
(
V
)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(
TYPICAL
)
0
400 800 1200 1600
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(
TYPICAL
)
EMITTER-COLLECTOR VOLTAGE V
EC
(
V
)
EMITTER CURRENT I E
(
A
)
5
4
3
2
1
0
T j = 25°C
T
j = 125°C