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MITSUBISHI HVIGBT MODULES CM800DZ-34H HIGH POWER SWITCHING USE 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules INSULATED TYPE CM800DZ-34H ● IC ................................................................... 800A ● VCES ....................................................... 1700V ● Insulated Type ● 2-elements in a pack APPLICATION Inverters, Converters, DC choppers, Induction heating, DC to DC converters. OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 130 114 57±0.
MITSUBISHI HVIGBT MODULES CM800DZ-34H 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE MAXIMUM RATINGS (Tj = 25°C) Symbol VCES VGES IC ICM IE (Note 2) IEM (Note 2) PC (Note 3) Tj Tstg Viso Item Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature Isolation voltage — Mounting torque — Mass Conditions VGE = 0V VCE = 0V TC = 25°C Pulse TC
SECURITY CODE SPEC.NAME Application Note MITSUBISHI ELECTRIC CORPORATION Prepared by Checked by Approved by DATE S.Iura M.Yamamoto M.Yamamoto Apr.8.2002 R E V A S.Iura I.Umesaki M.Tabata Aug.2.2002 Data Sheet (CM800DZ−34H) 1. Output characteristics Page 2 2. Transfer characteristics Page 3 3. Collector-emitter saturation voltage characteristics Page 4 / 5 4. Free wheel diode forward characteristics Page 6 5. Capacitance characteristics Page 7 6. Gate charge characteristics Page 8 7.
12000 Tj=25°C 10000 COLLECTOR CURRENT [A] 8000 VGE=20V 6000 4000 VGE=15V VGE=14V VGE=12V 2000 VGE=10V VGE= 8V 0 0 5 10 15 20 COLLECTOR-EMITTER VOLTAGE [V] Output characteristics (typical) HVIGBT HVM-1005-A (P2-OU) PAGE 2 / 15
12000 VCE=10V 10000 COLLECTOR CURRENT [A] 8000 Tj=25°C 6000 4000 Tj=125°C 2000 0 0 5 10 15 20 GATE-EMITTER VOLTAGE [V] Transfer characteristics (typical) HVIGBT HVM-1005-A (P2-OU) PAGE 3 / 15
6 VGE=15V 5 COLLECTOR-EMITTER VOLTAGE [V] Tj=125°C 4 Tj=25°C 3 2 1 0 0 500 1000 1500 2000 COLLECTOR CURRENT [A] Collector-emitter saturation voltage characteristics (typical) HVIGBT HVM-1005-A (P2-OU) PAGE 4 / 15
10 Tj=25°C 9 COLLECTOR-EMITTER SATURATION VOLTAGE [V] 8 7 6 5 4 Ic = 1600A 3 Ic = 800A Ic = 400A 2 1 0 0 5 10 15 20 GATE-EMITTER VOLTAGE [V] Collector-emitter saturation voltage characteristics (typical) HVIGBT HVM-1005-A (P2-OU) PAGE 5 / 15
5 EMITTER-COLLECTOR VOLTAGE [V] 4 Tj=25°C 3 Tj=125°C 2 1 0 0 500 1000 1500 2000 EMITTER CURRENT [A] Free wheel diode forward voltage characteristics (typical) HVIGBT HVM-1005-A (P2-OU) PAGE 6 / 15
00 VGE=15V, Tj=25°C f=100kHz Cies: Coes: f=100kHz Cres: f=1MHz 100 CAPACITANCE [nF] Cies 10 Coes Cres 1 0.
20 VCC=850V IC=800A 18 16 GATE-EMITTER VOLTAGE [V] 14 12 10 8 6 4 2 0 0 2500 5000 7500 10000 GATE CHARGE [nC] Gate charge characteristics (typical) HVIGBT HVM-1005-A (P2-OU) PAGE 8 / 15
10 VCC=850V, VGE=±15V RG=3.3Ω, Tj=125°C, LS=150nH Inductive load td(off) 1 SWITCHING TIME [µs] td(on) tr tf 0.1 0.
1.2 VCC=850V, VGE=±15V RG=3.3Ω, Tj=125°C, LS=150nH Inductive load Integrated over range of 10% 1 SWITCHING ENERGY [J/P] 0.8 Eon 0.6 0.4 Eoff 0.
100 10000 VCC=850V, Tj=125°C LS=150nH, Inductive load 1000 REVERSE RECOVERY TIME [µs] 10 Irr trr 1 100 0.1 10 100 1000 REVERSE RECOVERY CURRENT [A] IGBT drive conditions VGE=±15V, RG=3.
NORMALIZED TRANSIENT THERMAL IMPEDANCE Transient thermal impedance characteristics HVIGBT HVM-1005-A (P2-OU) PAGE 12 / 15 0.0 0.001 0.2 0.4 0.6 0.8 1.0 1.2 0.010 TIME [second] 0.100 1.000 . Single pulse Tc = 25°C IGBT part : Rth(j-c)=0.020 K/W FWDi part: Rth(j-c)=0.034 K/W 10.
3000 VCC≤1150V, VGE=±15V RG≥3.
6000 VCC≤1150V, VGE=±15V RG≥3.
2500 VCC≤1150V, Tj=125°C di/dt≤1800A/µs REVERSE RECOVERY CURRENT [A] 2000 1500 1000 500 0 0 500 1000 1500 2000 EMITTER-COLLECTOR VOLTAGE [V] Reverse recovery safe operating area (RRSOA / Di-SOA) HVIGBT HVM-1005-A (P2-OU) PAGE 15 / 15
