User Manual

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CM600DU-5F
Dual IGBTMOD™ F-Series Module
600 Amperes / 250 Volts
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]
Absolute Maximum Ratings, T
j
= 25 °C unless otherwise specified
Ratings Symbol CM600DU-5F Units
Junction Temperature T
j
-40 to 150 °C
Storage Temperature T
stg
-40 to 125 °C
Collector-Emitter Voltage (G-E SHORT) V
CES
250 Volts
Gate-Emitter Voltage (C-E SHORT) V
GES
±20 Volts
Collector Current (T
c
= 25°C) I
C
600 Amperes
I
C(rms)
350 Amperes (rms)
Peak Collector Current I
CM
1200* Amperes
Emitter Current** (T
c
= 25°C) I
E
600 Amperes
I
E(r ms)
350 Amperes (rms)
Peak Emitter Current** I
EM
1200* Amperes
Maximum Collector Dissipation (T
c
= 25°C, T
j
≤ 150°C) P
c
1100 Watts
Mounting Torque, M6 Main Terminal – 40 in-lb
Mounting Torque, M6 Mounting – 40 in-lb
Weight – 580 Grams
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) V
iso
2500 Volts
* Pulse width and repetition rate should be such that the device junction temperature (T
j
) does not exceed T
j(max)
rating.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Static Electrical Characteristics, T
j
= 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector-Cutoff Current I
CES
V
CE
= V
CES
, V
GE
= 0V ––1mA
Gate Leakage Current I
GES
V
GE
= V
GES
, V
CE
= 0V ––0.5 µA
Gate-Emitter Threshold Voltage V
GE(th)
I
C
= 60mA, V
CE
= 10V 3.0 4.0 5.0 Volts
Collector-Emitter Saturation Voltage V
CE(sat)
I
C
= 600A, V
GE
= 10V, T
j
= 25°C – 1.2 1.7 Volts
I
C
= 600A, V
GE
= 10V, T
j
= 125°C – 1.1 – Volts
Total Gate Charge Q
G
V
CC
= 100V, I
C
= 600A, V
GE
= 10V – 2200 – nC
Emitter-Collector Voltage** V
EC
I
E
= 600A, V
GE
= 0V ––2.0 Volts
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Dynamic Electrical Characteristics, T
j
= 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Input Capacitance C
ies
––170 nf
Output Capacitance C
oes
V
CE
= 10V, V
GE
= 0V ––11 nf
Reverse Transfer Capacitance C
res
––5.7 nf
Turn-on Delay Time t
d(on)
V
CC
= 100V, I
C
= 600A, ––850 ns
Rise Time t
r
V
GE1
= V
GE2
= 10V, ––600 ns
Turn-off Delay Time t
d(off)
R
G
= 4.2⍀, ––1100 ns
F all Time t
f
Inductive Load ––500 ns
Diode Reverse Recovery Time** t
rr
Switching Operation ––300 ns
Diode Reverse Recovery Charge** Q
rr
I
E
= 600A – 20.0 – µC
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
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