User Manual

CM600DU-12NFH
Dual IGBTMOD™ NFH-Series Module
600 Amperes/600 Volts
3
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
07/11 Rev. 2
Electrical Characteristics, T
j
= 25 °C unless otherwise specied
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector-Emitter Cutoff Current I
CES
V
CE
= V
CES
, V
GE
= 0V 1.0 mA
Gate-Emitter Leakage Current I
GES
±V
GE
= V
GES
, V
CE
= 0V 0.5 µA
Gate-Emitter Threshold Voltage V
GE(th)
I
C
= 60mA, V
CE
= 10V 5.0 6.0 7.0 Volts
Collector-Emitter Saturation Voltage V
CE(sat)
I
C
= 600A, V
GE
= 15V, T
j
= 25°C
*6
2.0 2.7 Volts
I
C
= 600A, V
GE
= 15V, T
j
= 125°C
*6
— 1.95 — Volts
Input Capacitance C
ies
166 nF
Output Capacitance C
oes
V
CE
= 10V, V
GE
= 0V 11 nF
Reverse Transfer Capacitance C
res
6.0 nF
Gate Charge Q
G
V
CC
= 300V, I
C
= 600A, V
GE
= 15V 3720 nC
Turn-on Delay Time t
d(on)
— 650 ns
Rise Time t
r
V
CC
= 300V, I
C
= 600A, 250 ns
Turn-off Delay Time t
d(off)
V
GE
= ±15V, R
G
= 2.0Ω, 800 ns
Fall Time t
f
Inductive Load Switching Operation 150 ns
Emitter-Collector Voltage V
EC
*1
I
E
= 600A, V
GE
= 0V
*6
2.0 2.6 Volts
Reverse Recovery Time t
rr
*1
V
CC
= 300V, I
E
= 600A, V
GE
= ±15V — 200 ns
Reverse Recovery Charge Q
rr
*1
R
G
= 2.0Ω, Inductive Load 11 µC
Turn-on Switching Energy per Pulse E
on
V
CC
= 600V, I
C
= I
E
= 600A, 11 mJ
Turn-off Switching Energy per Pulse E
off
V
GE
= ±15V, R
G
= 2.0Ω, 27 mJ
Reverse Recovery Energy per Pulse E
rr
*1
T
j
= 125°C, Inductive Load 6.3 mJ
Internal Gate Resistance r
g
Per Switch — 0.8 —
*1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (FWDi).
*6 Pulse width and repetition rate should be such as to cause negligible temperature rise.