User Manual

CM600DU-12NFH
Dual IGBTMOD™ NFH-Series Module
600 Amperes/600 Volts
2
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone] www.pwrx.com
07/11 Rev. 2
Absolute Maximum Ratings, T
j
= 25 °C unless otherwise specied
Item Symbol Rating Units
Collector-Emitter Voltage (G-E Short-circuited) V
CES
600 Volts
Gate-Emitter Voltage (C-E Short-circuited) V
GES
±20 Volts
Collector Current (Operation)
*5
I
C
600 Amperes
Collector Current (Operation)
*5
I
C(rms)
400 Amperes
Collector Current (Pulse, Repetitive)
*4
I
CRM
1200 Amperes
Total Power Dissipation (T
C
= 25°C)
*2,*5
P
tot
1130 Watts
Total Power Dissipation (T
C
' = 25°C)
*3,*5
P
tot
' 2350 Watts
Emitter Current (Free Wheeling Diode Forward Current, Operation)
*5
I
E
*1
600 Amperes
Emitter Current (Free Wheeling Diode Forward Current, Operation)
*5
I
E(rms)
*1
400 Amperes
Emitter Current (Free Wheeling Diode Forward Current, Operation, Pulse, Repetitive)
*4
I
ERM
*1
1200 Amperes
Junction Temperature T
j
–40 to 150 °C
Storage Temperature T
stg
–40 to 125 °C
Isolation Voltage (Terminals to Baseplate, RMS, f = 60Hz, AC 1 min.) V
ISO
2500 Volts
*1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (FWDi).
*2 Case temperature (T
C
) and heatsink temperature (T
s
) is measured on the surface
(mounting side) of the baseplate and the heatsink side just under the chips.
Refer to the figure to the right for chip location.
*3 Case temperature (T
C
') and heatsink temperature (T
s
') is measured on the surface
(mounting side) of the baseplate and the heatsink side just under the chips.
Refer to the figure to the right for chip location.
The heatsink thermal resistance {R
th(s-a)
} should be measured just under the chips.
*4 Pulse width and repetition rate should be such that device junction temperature (T
j
)
does not exceed T
j(max)
rating.
*5 Junction temperature (T
j
) should not increase beyond maximum junction
temperature (T
j(max)
) rating.
0
29.4 44.2 77.2
29.4 44.2 64.8
32.0
44.4
27.3
42.1
G2E2E1G1
C2E1 C1E2
0 0
0
LABEL SIDE
Each mark points to the center position of each chip.
Tr1 / Tr2 : IGBT Di1 / Di2 : FWDi
Di1
Di1
Tr 1
Tr 1
Di2
Di2
Tr 2
Tr 2