User guide

CM500HA-34A
Single IGBTMOD™ A-Series Module
500 Amperes/1700 Volts
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone] www.pwrx.com
2 02/10 Rev. 1
Absolute Maximum Ratings, T
j
= 25°C unless otherwise specied
Ratings Symbol CM500HA-34A Units
Junction Temperature T
j
–40 to 150 °C
Storage Temperature T
stg
–40 to 125 °C
Collector-Emitter Voltage (G-E Short) V
CES
1700 Volts
Gate-Emitter Voltage (C-E Short) V
GES
±20 Volts
Collector Current (DC, T
C
= 110°C)*
4
I
C
500 Amperes
Peak Collector Current (Pulse, Repetitive)*
2
I
CM
1000 Amperes
Emitter Current (DC, T
C
= 25°C)*
4
I
E
*
1
500 Amperes
Peak Emitter Current (Pulse, Repetitive)*
2
I
EM
*
1
1000 Amperes
Maximum Collector Dissipation (T
C
= 25°C)*
2,
*
4
P
C
5000 Watts
Mounting Torque, M6 Main Terminal — 26 in-lb
Mounting Torque, M6 Mounting — 26 in-lb
Mounting Torque, M4 G(E) Terminal — 13 in-lb
Weight — 480 Grams
Isolation Voltage (Main Terminal to Baseplate, f = 60Hz, AC 1 min.) V
ISO
3500 Volts
Static Electrical Characteristics, T
j
= 25°C unless otherwise specied
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector-Cutoff Current I
CES
V
CE
= V
CES
, V
GE
= 0V — — 1.0 mA
Gate Leakage Current I
GES
V
GE
= V
GES
, V
CE
= 0V — — 3.0 µA
Gate-Emitter Threshold Voltage V
GE(th)
I
C
= 50mA, V
CE
= 10V 5.5 7.0 8.5 Volts
Collector-Emitter Saturation Voltage V
CE(sat)
I
C
= 500A, V
GE
= 15V, T
j
= 25°C*
3
— 2.3 3.0 Volts
I
C
= 500A, V
GE
= 15V, T
j
= 125°C*
3
— 2.45 — Volts
Total Gate Charge Q
G
V
CC
= 1000V, I
C
= 500A, V
GE
= 15V — 3300 — nC
Emitter-Collector Voltage*
1
V
EC
I
E
= 500A, V
GE
= 0V*
3
— — 3.2 Volts
Dynamic Electrical Characteristics, T
j
= 25°C unless otherwise specied
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Input Capacitance C
ies
— — 120 nf
Output Capacitance C
oes
V
CE
= 10V, V
GE
= 0V — — 14 nf
Reverse Transfer Capacitance C
res
— — 2.6 nf
Inductive Turn-on Delay Time t
d(on)
— — 900 ns
Load Rise Time t
r
V
CC
= 1000V, I
C
= 500A, — — 500 ns
Switch Turn-off Delay Time t
d(off)
V
GE1
= V
GE2
= 15V, R
G
= 3.0Ω, — — 1200 ns
Time Fall Time t
f
Inductive Load — — 250 ns
Diode Reverse Recovery Time*
1
t
rr
Switching Operation, — — 650 ns
Diode Reverse Recovery Charge*
1
Q
rr
I
E
= 500A — 50 — µC
*1 Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
*2 Pulse width and repetition rate should be such that device junction temperature (T
j
) does not exceed T
j(max)
rating.
*3 Pulse width and repetition rate should be such as to cause negligible temperature rise.
*4 Case temperature (T
C
), and heatsink temperature (T
f
) measured point is just under the chips.