User Manual

Jul. 2005
MITSUBISHI HVIGBT MODULES
CM400HG-66H
HIGH POWER SWITCHING USE
INSULATED TYPE
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
EMITTER-COLLECTOR VOLTAGE
(
V
)
REVERSE RECOVERY CURRENT
(
A
)
FREE-WHEEL DIODE REVERSE
RECOVERY SAFE OPERATING AREA
(
RRSOA
)
COLLECTOR-EMITTER VOLTAGE
(
V
)
COLLECTOR CURRENT
(
A
)
REVERSE BIAS SAFE OPERATING AREA
(
RBSOA
)
1200
1000
800
600
400
0
1000 20000 3000 4000
200
1200
1000
800
600
400
0
1000 20000 3000 4000
200
V CC ≤ 2200V, di/dt ≤ 2200A/µs
T
j = 125°C
V CC ≤ 2200V, V GE = +/-15V
T
j = 125°C, R G(off) ≥ 5Ω