User Manual

Jul. 2005
MITSUBISHI HVIGBT MODULES
CM400HG-66H
HIGH POWER SWITCHING USE
INSULATED TYPE
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
10
2
10
3
10
1
10
0
10
0
10
-1
23 57
10
1
10
2
23 57 23 57
2
3
5
7
2
3
5
7
2
3
5
7
CAPACITANCE CHARACTERISTICS
(
TYPICAL
)
COLLECTOR-EMITTER VOLTAGE
(
V
)
CAPACITANCE
(
nF
)
GATE CHARGE CHARACTERISTICS
(
TYPICAL
)
GATE CHARGE
(
µC
)
GATE-EMITTER VOLTAGE
(
V
)
COLLECTOR CURRENT
(
A
)
SWITCHING ENERGIES
(
J/pulse
)
HALF-BRIDGE
SWITCHING ENERGY CHARACTERISTICS
(
TYPICAL
)
GATE RESISTANCE
(
Ω
)
SWITCHING ENERGIES
(
J/pulse
)
HALF-BRIDGE
SWITCHING ENERGY CHARACTERISTICS
(
TYPICAL
)
20
16
12
8
4
0
32104
3
2.5
2
1.5
1
0
10 200 30 40 50
0.5
1.4
1.2
1
0.8
0.6
0
200 4000 600 800
0.2
0.4
V CC = 1650V, I C = 400A
T j = 25°C
E
on
E off
E rec
E off
C ies
C oes
C res
V CC = 1650V, I C = 400A
V GE = ±15V
T j = 125°C, Inductive load
V CC = 1650V, V GE = ±15V
R G(on) = R G(off) = 5Ω
T j = 125°C, Inductive load
E on
V GE = 0V, T j = 25°C
f = 100kHz
E
rec