User Manual

Jul. 2005
MITSUBISHI HVIGBT MODULES
CM400HG-66H
HIGH POWER SWITCHING USE
INSULATED TYPE
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
PERFORMANCE CURVES
OUTPUT CHARACTERISTICS
(
TYPICAL
)
COLLECTOR-EMITTER VOLTAGE
(
V
)
COLLECTOR CURRENT
(
A
)
TRANSFER CHARACTERISTICS
(
TYPICAL
)
GATE-EMITTER VOLTAGE
(
V
)
COLLECTOR CURRENT
(
A
)
COLLECTOR CURRENT
(
A
)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(
TYPICAL
)
EMITTER CURRENT
(
A
)
EMITTER-COLLECTOR VOLTAGE
(
V
)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(
TYPICAL
)
COLLECTOR-EMITTER SATURATION VOLTAGE
(
V
)
500
600
700
800
400
300
200
100
0
3421056
500
600
700
800
400
300
200
100
0
684201012
6
5
4
3
2
0
200 4000 600 800
1
6
5
4
3
2
0
200 4000 600 800
1
T j = 25°C
T
j = 125°C
T j = 25°C
T
j = 125°C
T j = 25°C
T
j = 125°C
V CE = 20V
T j = 125°C
V GE = 10V
V GE = 8V
V GE = 12V
V
GE = 20V
V GE = 15V
V GE = 15V