User Manual

Jul. 2005
MITSUBISHI HVIGBT MODULES
CM400HG-66H
HIGH POWER SWITCHING USE
INSULATED TYPE
● IC ...................................................................400A
● V
CES ....................................................... 3300V
● High Insulated Type
● 1-element in a Pack
● AISiC Baseplate
APPLICATION
Traction drives, High Reliability Converters / Inverters, DC choppers
CM400HG-66H
OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
17±0.1
140±0.5
124±0.25
44±0.3
73±0.5
57±0.25
2
1
EG
C
16.2±0.3
2 - M8 NUTS
4 - φ 7 MOUNTING HOLES
29.7
36
C
E
G
(1)
(2)
C
E
CIRCUIT DIAGRAM
40.4±0.5
TAB # 110, T = 0.5
2.8
17.4
±0.3
22±0.3
41±0.5
LABEL
5
21.6
±0.3 12.9±0.3
5.8
5
±0.15
36.2
48
+1.0 0
screwing depth
min. 16.5
screwing depth
min. 4