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MITSUBISHI HVIGBT MODULES CM400HG-66H 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE CM400HG-66H ● IC ................................................................... 400A ● VCES .......................................................
MITSUBISHI HVIGBT MODULES CM400HG-66H 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE MAXIMUM RATINGS Symbol Item VCES VGES IC ICM IE (Note 2) IEM(Note 2) PC (Note 3) Tj Top Tstg Viso Collector-emitter voltage Gate-emitter voltage Qpd Partial discharge tpsc Maximum short circuit pulse width Collector current Emitter current Maximum power dissipation Junction temperature Operating temperature Storage temperature Isolation voltage
MITSUBISHI HVIGBT MODULES CM400HG-66H 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE THERMAL CHARACTERISTICS Symbol Rth(j-c)Q Rth(j-c)R Rth(c-f) Item Thermal resistance Contact thermal resistance Conditions Junction to Case, IGBT part Junction to Case, FWDi part Case to Fin, λgrease = 1W/m·K Min — — — Limits Typ — — 18.0 Max 30.0 60.
MITSUBISHI HVIGBT MODULES CM400HG-66H HIGH POWER SWITCHING USE INSULATED TYPE 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules PERFORMANCE CURVES OUTPUT CHARACTERISTICS (TYPICAL) TRANSFER CHARACTERISTICS (TYPICAL) 800 800 VCE = 20V Tj = 125°C 700 VGE = 20V 600 VGE = 15V VGE = 12V 500 400 VGE = 10V 300 200 COLLECTOR CURRENT (A) COLLECTOR CURRENT (A) 700 600 500 400 300 200 VGE = 8V 100 0 1 2 3 4 5 0 6 Tj = 25°C Tj = 125°C 0 2 4 6 8 10 COLLECTOR-EMITT
MITSUBISHI HVIGBT MODULES CM400HG-66H HIGH POWER SWITCHING USE INSULATED TYPE 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules CAPACITANCE CHARACTERISTICS (TYPICAL) GATE CHARGE CHARACTERISTICS (TYPICAL) 103 20 VGE = 0V, Tj = 25°C f = 100kHz 7 5 VCC = 1650V, IC = 400A Tj = 25°C GATE-EMITTER VOLTAGE (V) 3 CAPACITANCE (nF) 2 102 Cies 7 5 3 2 101 7 5 Coes 16 12 8 4 3 2 Cres 100 -1 10 1.
MITSUBISHI HVIGBT MODULES CM400HG-66H 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules FREE-WHEEL DIODE REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 7 5 102 VCC = 1650V, VGE = ±15V RG(on) = RG(off) = 5Ω Tj = 125°C, Inductive load 7 5 REVERSE RECOVERY TIME (µs) 3 SWITCHING TIMES (µs) 2 101 7 5 td(off) 3 2 td(on) 100 7 5 tr 3 tf 2 10-1 1 10 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 COLLECTOR CURRENT (A) 104 VCC = 1650V, VGE = ±15V RG(on) = RG(off) = 5Ω Tj = 125°
MITSUBISHI HVIGBT MODULES CM400HG-66H HIGH POWER SWITCHING USE INSULATED TYPE 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules FREE-WHEEL DIODE REVERSE RECOVERY SAFE OPERATING AREA (RRSOA) REVERSE BIAS SAFE OPERATING AREA (RBSOA) 1200 1200 REVERSE RECOVERY CURRENT (A) VCC ≤ 2200V, VGE = +/-15V Tj = 125°C, RG(off) ≥ 5Ω COLLECTOR CURRENT (A) 1000 800 600 400 200 0 0 1000 2000 3000 4000 COLLECTOR-EMITTER VOLTAGE (V) VCC ≤ 2200V, di/dt ≤ 2200A/µs Tj = 125°C 1000
