Owner's manual

3
CM400HB-90H
Single IGBTMOD™ HVIGBT
400 Amperes/4500 Volts
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]
Dynamic Electrical Characteristics, T
j
= 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Input Capacitance C
ies
– 72 – nF
Output Capacitance C
oes
V
GE
= 0V, V
CE
= 10V – 5.3 – nF
Reverse Transfer Capacitance C
res
– 1.6 – nF
Resistive Turn-on Delay Time t
d(on)
V
CC
= 2250V, I
C
= 400A, –– 2.4 µs
Load Rise Time t
r
V
GE1
= V
GE2
= 15V, –– 2.4 µs
Switching Turn-off Delay Time t
d(off)
R
G
= 22.5Ω –– 6.0 µs
Times Fall Time t
f
Resistive Load Switching Operation –– 1.2 µs
Diode Reverse Recovery Time** t
rr
I
E
= 400A, di
E
/dt = -800A/ µ s –– 1.8 µ s
Diode Reverse Recovery Charge** Q
rr
I
E
= 400A, di
E
/dt = -800A/ µ s – 160* – µ C
* Pulse width and repetition rate should be such that device junction temperature rise is negligible.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Thermal and Mechanical Characteristics, T
j
= 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Thermal Resistance, Junction to Case R
th(j-c)
Q Per IGBT ––0.023 K/W
Thermal Resistance, Junction to Case R
th(j-c)
D Per FWDi ––0.045 K/W
Contact Thermal Resistance, Case to Fin R
th(c-f)
Per Module, Thermal Grease Applied – 0.015 – K/W