Owner's manual

2
CM400HB-90H
Single IGBTMOD™ HVIGBT
400 Amperes/4500 Volts
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]
Absolute Maximum Ratings, T
j
= 25 °C unless otherwise specified
Ratings Symbol CM400HB-90H Units
Junction Temperature T
j
-40 to 150 °C
Storage Temperature T
stg
-40 to 125 °C
Collector-Emitter Voltage (V
GE
= 0V) V
CES
4500 Volts
Gate-Emitter Voltage (V
CE
= 0V) V
GES
±20 Volts
Collector Current (T
c
= 25°C) I
C
400 Amperes
Peak Collector Current (Pulse) I
CM
800* Amperes
Diode Forward Current** (T
c
= 25°C) I
E
400 Amperes
Diode Forward Surge Current** (Pulse) I
EM
800* Amperes
Maximum Collector Dissipation (T
c
= 25°C, IGBT Part, T
j
≤ 125°C) P
C
4300 Watts
Max. Mounting Torque M8 Terminal Screws – 115 in-lb
Max. Mounting Torque M6 Mounting Screws – 53 in-lb
Max. Mounting Torque M4 Auxiliary Terminal Screws – 17 in-lb
Module Weight (Typical) – 1.5 kg
Isolation Voltage (Charged Part to Baseplate, AC 60Hz 1 min.) V
iso
6000 Volts
* Pulse width and repetition rate should be such that device junction temperature (T
j
) does not exceed T
j(max)
rating.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Static Electrical Characteristics, T
j
= 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector-Cutoff Current I
CES
V
CE
= V
CES
, V
GE
= 0V ––8.0 mA
Gate Leakage Current I
GES
V
GE
= V
GES
, V
CE
= 0V ––0.5 µ A
Gate-Emitter Threshold Voltage V
GE(th)
I
C
= 40mA, V
CE
= 10V 4.5 6.0 7.5 Volts
Collector-Emitter Saturation Voltage V
CE(sat)
I
C
= 400A, V
GE
= 15V, T
j
= 25°C – 3.0 3.9* Volts
I
C
= 400A, V
GE
= 15V, T
j
= 125°C – 3.3 – Volts
Total Gate Charge Q
G
V
CC
= 2250V, I
C
= 400A, V
GE
= 15V – 3.6 – µC
Emitter-Collector Voltage** V
EC
I
E
= 400A, V
GE
= 0V – 4.0 5.2 Volts
* Pulse width and repetition rate should be such that device junction temperature rise is negligible.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).