Instruction Manual
CM400HA-24A
Single IGBTMOD™ A-Series Module
400 Amperes/1200 Volts
2 01/10 Rev. 1
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
Absolute Maximum Ratings, T
j
= 25°C unless otherwise specied
Ratings Symbol CM400HA-24A Units
Junction Temperature T
j
–40 to 150 °C
Storage Temperature T
stg
–40 to 125 °C
Collector-Emitter Voltage (G-E Short) V
CES
1200 Volts
Gate-Emitter Voltage (C-E Short) V
GES
±20 Volts
Collector Current (DC, T
C
= 87°C)*
4
I
C
400 Amperes
Peak Collector Current (Pulse, Repetitive)*
2
I
CM
800 Amperes
Maximum Collector Dissipation (T
C
= 25°C)*
2,
*
4
P
C
2350 Watts
Emitter Current (T
C
= 25°C) I
E
*
1
400 Amperes
Peak Emitter Current (Pulse, Repetitive)*
2
I
EM
*
1
800 Amperes
Mounting Torque, M6 Main Terminal — 26 in-lb
Mounting Torque, M6 Mounting — 26 in-lb
Mounting Torque, M4 G(E) Terminal — 13 in-lb
Weight — 480 Grams
Isolation Voltage (Main Terminal to Baseplate, f = 60Hz, AC 1 min.) V
ISO
2500 Volts
Electrical Characteristics, T
j
= 25°C unless otherwise specied
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector-Cutoff Current I
CES
V
CE
= V
CES
, V
GE
= 0V — — 1.0 mA
Gate Leakage Current I
GES
±V
GE
= V
GES
, V
CE
= 0V — — 1.0 µA
Gate-Emitter Threshold Voltage V
GE(th)
I
C
= 40mA, V
CE
= 10V 6.0 7.0 8.0 Volts
Collector-Emitter Saturation Voltage V
CE(sat)
I
C
= 400A, V
GE
= 15V, T
j
= 25°C*
3
— 2.1 3.0 Volts
I
C
= 400A, V
GE
= 15V, T
j
= 125°C*
3
— 2.4 — Volts
Forward Transfer Admittance |γ
fs
| I
C
= 400A, V
CE
= 10V*
3
120 — — sec
Input Capacitance C
ies
— — 70 nf
Output Capacitance C
oes
V
CE
= 10V, V
GE
= 0V — — 6 nf
Reverse Transfer Capacitance C
res
— — 1.4 nf
Total Gate Charge Q
G
V
CC
= 600V, I
C
= 400A, V
GE
= 15V — 2000 — nC
Inductive Turn-on Delay Time t
d(on)
— — 550 ns
Load Rise Time t
r
V
CC
= 600V, I
C
= 400A, — — 180 ns
Switch Turn-off Delay Time t
d(off)
V
GE
= ±15V, R
G
= 0.78Ω, — — 600 ns
Time Fall Time t
f
Inductive Load — — 350 ns
Diode Reverse Recovery Time t
rr
*
1
I
E
= 400A — — 250 ns
Diode Reverse Recovery Charge Q
rr
*
1
— 14.7 — µC
Emitter-Collector Voltage V
EC
*
1
I
E
= 400A, V
GE
= 0V*
3
— — 3.8 Volts
External Gate Resistance R
G
0.78 — 10 Ω
*1 Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
*2 Pulse width and repetition rate should be such that device junction temperature (T
j
) does not exceed T
j(max)
rating.
*3 Pulse width and repetition rate should be such as to cause negligible temperature rise.
*4 Case temperature (T
C
), and heatsink temperature (T
f
) measured point is just under the chips.