Owner's manual

Mar. 2003
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MITSUBISHI HVIGBT MODULES
CM400DY-66H
HIGH POWER SWITCHING USE
INSULATED TYPE
400030000 1000 2000
7
5
3
2
710
2
10
–1
7
23 5710
3
23 5
5
3
2
10
0
5
7
5
3
2
710
2
10
–1
7
23 5710
3
23 5
5
5
3
2
10
0
5
td(off)
VCC = 1650V, VGE = ±15V
R
G = 7.5Ω, Tj = 125°C
Inductive load
td(on)
tr
tf
VCC = 1650V, Tj = 125°C
Inductive load
V
GE = ±15V, RG = 7.5Ω
trr
Irr
7
5
3
2
10
1
7
5
3
2
10
2
10
1
10
3
10
–2
10
–3
10
–2
10
–1
10
0
7
5
3
2
10
–1
7
5
3
2
10
0
10
1
7
5
3
2
23 57 23 57 23 57
Single Pulse
T
C = 25°C
R
th(j – c)Q = 0.036K/W
R
th(j – c)R = 0.072K/W
(Per 1/2 module)
20
16
12
8
4
0
VCC = 1650V
I
C = 400A
HALF-BRIDGE
SWITCHING TIME CHARACTERISTICS
(
TYPICAL
)
SWITCHING TIMES
(
µs
)
COLLECTOR CURRENT IC
(
A
)
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE
(
TYPICAL
)
REVERSE RECOVERY TIME trr
(
µs
)
EMITTER CURRENT IE
(
A
)
REVERSE RECOVERY CURRENT Irr
(
A
)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
NORMALIZED TRANSIENT
THERMAL IMPEDANCE Z
th(j – c)
TIME
(
s
)
GATE CHARGE CHARACTERISTICS
(
TYPICAL
)
GATE-EMITTER VOLTAGE VGE
(
V
)
GATE CHARGE QG
(
nC
)
5.0
4.0
3.0
2.0
1.0
0
0 20406080
GATE RESISTANCE
(
Ω
)
HALF-BRIDGE
SWITCHING ENERGY CHARACTERISTICS
(
TYPICAL
)
SWITCHING ENERGY
(
J/P
)
VCC = 1650V, IC = 400A,
V
GE = ±15V, Tj = 125°C,
Inductive load
Eon
Eoff
0
1.0
1.5
0.5
2.0
0 200 400 800600
HALF-BRIDGE
SWITCHING ENERGY CHARACTERISTICS
(
TYPICAL
)
CURRENT
(
A
)
SWITCHING ENERGY
(
J/P
)
Eon
Eoff
Erec
VCC = 1650V, VGE = ±15V,
R
G = 7.5Ω, Tj = 125°C,
Inductive load