Owner's manual

Mar. 2003
MITSUBISHI HVIGBT MODULES
CM400DY-50H
HIGH POWER SWITCHING USE
INSULATED TYPE
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
PERFORMANCE CURVES
800
400
200
0
100
2468
600
Tj=25°C
VGE=13V
VGE=12V
VGE=11V
VGE=10V
VGE=9V
VGE=8V
VGE=7V
VGE=14V
VGE=15V
VGE=20V
0
5
4
3
2
1
0
200 400 600 800
VGE=15V
Tj = 25°C
Tj = 125°C
800
400
200
0
600
200481216
VCE=10V
Tj = 25°C
T
j = 125°C
020161284
10
8
6
4
2
0
Tj = 25°C
IC = 400A
IC = 800A
IC = 160A
10
0
2310
–1
5710
0
23 5710
1
23 5710
2
10
2
7
5
3
2
10
1
7
5
3
2
7
5
3
2
10
–1
CAPACITANCE Cies, Coes, Cres
(
nF
)
Cies
Coes
Cres
VGE = 0V, Tj = 25°C
Cies, Coes : f = 100kHz
Cres
: f = 1MHz
CAPACITANCE CHARACTERISTICS
(
TYPICAL
)
CAPACITANCE Cies, Coes, Cres
(
nF
)
COLLECTOR-EMITTER VOLTAGE VCE
(
V
)
OUTPUT CHARACTERISTICS
(
TYPICAL
)
COLLECTOR CURRENT IC
(
A
)
TRANSFER CHARACTERISTICS
(
TYPICAL
)
COLLECTOR CURRENT IC
(
A
)
GATE-EMITTER VOLTAGE VGE
(
V
)
COLLECTOR-EMITTER
SATURATION VOLTAGE V
CE(sat)
(
V
)
COLLECTOR CURRENT IC
(
A
)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(
TYPICAL
)
COLLECTOR-EMITTER VOLTAGE V
CE
(
V
)
COLLECTOR-EMITTER
SATURATION VOLTAGE V
CE(sat)
(
V
)
GATE-EMITTER VOLTAGE VGE
(
V
)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(
TYPICAL
)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(
TYPICAL
)
EMITTER-COLLECTOR VOLTAGE VEC
(
V
)
EMITTER CURRENT IE
(
A
)
0 600 800400200
3
4
5
2
1
0
Tj = 25°C
T
j = 125°C