User guide

CM200RX-12A
Six IGBTMOD™ + Brake NX-Series Module
200 Amperes/600 Volts
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone]
4 Rev. 11/08
Electrical and Mechanical Characteristics, T
j
= 25°C unless otherwise specied
Brake Sector
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector Cutoff Current I
CES
V
CE
= V
CES
, V
GE
= 0V — — 1.0 mA
Gate-Emitter Threshold Voltage V
GE(th)
I
C
= 10mA 5 6 7 Volts
Gate Leakage Current I
GES
V
GE
= V
GES
, V
CE
= 0V — — 0.5 µA
Collector-Emitter Saturation Voltage V
CE(sat)
I
C
= 100A, V
GE
= 15V, T
j
= 25°C — 1.7 2.1 Volts
I
C
= 100A, V
GE
= 15V, T
j
= 125°C — 1.9 — Volts
I
C
= 100A, V
GE
= 15V, Chip — 1.6 — Volts
Input Capacitance C
ies
— — 13.3 nF
Output Capacitance C
oes
V
CE
= 10V, V
GE
= 0V — — 1.4 nF
Reverse Transfer Capacitance C
res
— — 0.45 nF
Total Gate Charge Q
G
V
CC
= 300V, I
C
= 100A, V
GE
= 15V — 300 — nC
Repetitive Reverse Current* I
RRM
V
R
= V
RRM
— — 1.0 mA
Forward Voltage Drop * V
F
I
F
= 100A, T
j
= 25°C — 2.0 2.8 Volts
I
F
= 100A, T
j
= 125°C — 1.95 — Volts
I
F
= 100A, Chip — 1.9 — Volts
Thermal and Mechanical Characteristics, T
j
= 25°C unless otherwise specied
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Thermal Resistance, Junction to Case** R
th(j-c)
Q Per IGBT — — 0.31 °C/W
Thermal Resistance, Junction to Case** R
th(j-c)
D Per FWDi — — 0.59 °C/W
Contact Thermal Resistance** R
th(j-f)
Thermal Grease Applied — 0.015 — °C/W
Internal Gate Resistance R
Gint
T
C
= 25°C — 0 — Ω
External Gate Resistance R
G
6 — 62 Ω
NTC Thermistor Sector, T
j
= 25°C unless otherwise specied
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Zero Power Resistance R T
C
= 25°C 4.85 5.00 5.15 kΩ
Deviation of Resistance ∆R/R T
C
= 100°C, R
100
= 493Ω –7.3 — +7.8 %
B Constant B
(25/50)
B = (InR
1
– InR
2
) / (1/T
1
– 1/T
2
)*** — 3375 — K
Power Dissipation P
25
T
C
= 25°C — — 10 mW
*Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
**T
C
, T
f
measured point is just under the chips.
***R1: Resistance at Absolute Temperature T
1
(K), R
2
: Resistance at Absolute Temperature T
2
(K), T(K) = t(°C) + 273.15