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CM200HG-130H Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Single IGBTMOD™ HVIGBT Module 200 Amperes/6500 Volts A D DETAIL “A” C H F E B G M K (4 PLACES) L (2 PLACES) J DETAIL “B” R T S V U Q P N W H V BB BB Z DD X DETAIL “A” Features: CC Y Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of one IGBT Transistor in a reverse-connected super-fast recovery free-wheel diode.
Powerex, Inc., 200 E.
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM200HG-130H Single IGBTMOD™ HVIGBT Module 200 Amperes/6500 Volts Static Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Collector-Cutoff Current* Gate-Emitter Threshold Voltage Gate Leakage Current Collector-Emitter Saturation Voltage Symbol ICES Test Conditions Min. Typ. Max. Units VCE = VCES, VGE = 0V, Tj = 25°C – – 3.0 mA VCE = VCES, VGE = 0V, Tj = 125°C – 10 30.
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM200HG-130H Single IGBTMOD™ HVIGBT Module 200 Amperes/6500 Volts OUTPUT CHARACTERISTICS (TYPICAL) 15V 18V 1600 14V VGE = 20V 13V 1200 12V 800 10V 400 0 4 8 12 16 20 5 4 3 2 1 0 0 100 200 300 500 0.8 0.6 0.4 0.
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM200HG-130H Single IGBTMOD™ HVIGBT Module 200 Amperes/6500 Volts RISE TIME VS. COLLECTOR CURRENT (TYPICAL) FALL TIME VS. COLLECTOR CURRENT (TYPICAL) 101 100 VCC = 3600V VGE = ±15V RG(off) = 72Ω RG(on) = 30Ω LS = 200nH Tj = 125°C 10-1 101 102 1.0 0.5 0 103 0 100 200 300 400 SWITCHING LOSS (OFF) VS. GATE RESISTANCE (TYPICAL) SWITCHING LOSS (ON) VS. GATE RESISTANCE (TYPICAL) 0.5 100 200 300 400 3.0 2.
