Owner's manual

CM200DY-34A
Dual IGBTMOD™ A-Series Module
200 Amperes/1700 Volts
2 01/10 Rev. 1
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone] www.pwrx.com
Absolute Maximum Ratings, T
j
= 25°C unless otherwise specied
Ratings Symbol CM200DY-34A Units
Junction Temperature T
j
–40 to 150 °C
Storage Temperature T
stg
–40 to 125 °C
Collector-Emitter Voltage (G-E Short) V
CES
1700 Volts
Gate-Emitter Voltage (C-E Short) V
GES
±20 Volts
Collector Current (DC, T
C
= 109°C)*
4
I
C
200 Amperes
Peak Collector Current (Pulse Repetition)*
2
I
CM
400 Amperes
Emitter Current (T
C
= 25°C) I
E
*
1
200 Amperes
Peak Emitter Current (Pulse Repetition)*
2
I
EM
*
1
400 Amperes
Maximum Collector Dissipation (T
C
= 25°C, T
j
≤ 150°C)*
2,
*
4
P
C
1980 Watts
Mounting Torque, M5 Main Terminal — 30 in-lb
Mounting Torque, M6 Mounting — 40 in-lb
Weight — 400 Grams
Isolation Voltage (Main Terminal to Baseplate, f = 60Hz, AC 1 min.) V
ISO
3500 Volts
Static Electrical Characteristics, T
j
= 25°C unless otherwise specied
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector-Cutoff Current I
CES
V
CE
= V
CES
, V
GE
= 0V — — 1.0 mA
Gate Leakage Current I
GES
V
GE
= V
GES
, V
CE
= 0V — — 2.0 µA
Gate-Emitter Threshold Voltage V
GE(th)
I
C
= 20mA, V
CE
= 10V 5.5 7.0 8.5 Volts
Collector-Emitter Saturation Voltage V
CE(sat)
I
C
= 200A, V
GE
= 15V, T
j
= 25°C*
3
— 2.2 2.8 Volts
I
C
= 200A, V
GE
= 15V, T
j
= 125°C*
3
— 2.45 — Volts
Total Gate Charge Q
G
V
CC
= 1000V, I
C
= 200A, V
GE
= 15V — 1330 — nC
Emitter-Collector Voltage V
EC
*
1
I
E
= 200A, V
GE
= 0V*
3
— — 3.0 Volts
Dynamic Electrical Characteristics, T
j
= 25°C unless otherwise specied
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Input Capacitance C
ies
— — 49.4 nf
Output Capacitance C
oes
V
CE
= 10V, V
GE
= 0V — — 5.6 nf
Reverse Transfer Capacitance C
res
— — 1.06 nf
Inductive Turn-on Delay Time t
d(on)
— — 550 ns
Load Rise Time t
r
V
CC
= 1000V, I
C
= 200A, — — 190 ns
Switch Turn-off Delay Time t
d(off)
V
GE1
= V
GE2
= 15V, R
G
= 2.4Ω, — — 750 ns
Time Fall Time t
f
Inductive Load — — 350 ns
Diode Reverse Recovery Time t
rr
*
1
Switching Operation, — — 450 ns
Diode Reverse Recovery Charge Q
rr
*
1
I
E
= 200A — 20 — µC
*1 Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
*2 Pulse width and repetition rate should be such that device junction temperature (T
j
) does not exceed T
j(max)
rating.
*3 Pulse width and repetition rate should be such as to cause negligible temperature rise.
*4 Case temperature (T
C
), and heatsink temperature (T
f
) measured point is just under the chips.