Owner manual

CM200DY-24A
Dual IGBTMOD™ A-Series Module
200 Amperes/1200 Volts
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone]
2 Rev. 08/09
Absolute Maximum Ratings, T
j
= 25°C unless otherwise specied
Ratings Symbol CM200DY-24A Units
Junction Temperature T
j
–40 to 150 °C
Storage Temperature T
stg
–40 to 125 °C
Collector-Emitter Voltage (G-E Short) V
CES
1200 Volts
Gate-Emitter Voltage (C-E Short) V
GES
±20 Volts
Collector Current (DC, T
C
= 86°C*) I
C
200 Amperes
Peak Collector Current I
CM
400** Amperes
Emitter Current*** (T
C
= 25°C) I
E
200 Amperes
Peak Emitter Current*** I
EM
400** Amperes
Maximum Collector Dissipation (T
C
= 25°C*, T
j
≤ 150°C) P
C
1340 Watts
Mounting Torque, M5 Main Terminal — 30 in-lb
Mounting Torque, M6 Mounting — 40 in-lb
Weight — 310 Grams
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) V
ISO
2500 Volts
Static Electrical Characteristics, T
j
= 25°C unless otherwise specied
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector-Cutoff Current I
CES
V
CE
= V
CES
, V
GE
= 0V — — 1.0 mA
Gate Leakage Current I
GES
V
GE
= V
GES
, V
CE
= 0V — — 0.5 µA
Gate-Emitter Threshold Voltage V
GE(th)
I
C
= 20mA, V
CE
= 10V 6.0 7.0 8.0 Volts
Collector-Emitter Saturation Voltage V
CE(sat)
I
C
= 200A, V
GE
= 15V, T
j
= 25°C — 2.1 3.0 Volts
I
C
= 200A, V
GE
= 15V, T
j
= 125°C — 2.4 — Volts
Total Gate Charge Q
G
V
CC
= 600V, I
C
= 200A, V
GE
= 15V — 1000 — nC
Emitter-Collector Voltage** V
EC
I
E
= 200A, V
GE
= 0V — — 3.8 Volts
Dynamic Electrical Characteristics, T
j
= 25°C unless otherwise specied
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Input Capacitance C
ies
— — 35 nf
Output Capacitance C
oes
V
CE
= 10V, V
GE
= 0V — — 3 nf
Reverse Transfer Capacitance C
res
— — 0.68 nf
Inductive Turn-on Delay Time t
d(on)
— — 130 ns
Load Rise Time t
r
V
CC
= 600V, I
C
= 200A, — — 100 ns
Switch Turn-off Delay Time t
d(off)
V
GE1
= V
GE2
= 15V, R
G
= 1.6Ω, — — 450 ns
Time Fall Time t
f
Inductive Load — — 350 ns
Diode Reverse Recovery Time*** t
rr
Switching Operation, — — 150 ns
Diode Reverse Recovery Charge*** Q
rr
I
E
= 200A — 9.0 — µC
*T
C
, T
f
measured point is just under the chips.
**Pulse width and repetition rate should be such that device junction temperature (T
j
) does not exceed T
j(max)
rating.
***Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).