Instruction Manual

3
CM200DU-24F
Trench Gate Design Dual IGBTMOD™
200 Amperes/1200 Volts
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]
Dynamic Electrical Characteristics, T
j
= 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Input Capacitance C
ies
––78nf
Output Capacitance C
oes
V
CE
= 10V, V
GE
= 0V – – 3.4 nf
Reverse Transfer Capacitance C
res
––2nf
Inductive Turn-on Delay Time t
d(on)
V
CC
= 600V, I
C
= 200A, – – 300 ns
Load Rise Time t
r
V
GE1
= V
GE2
= 15V, – – 80 ns
Switch Turn-off Delay Time t
d(off)
R
G
= 1.6⍀,––500 ns
Times Fall Time t
f
Inductive Load – – 300 ns
Diode Reverse Recovery Time** t
rr
Switching Operation – – 200 ns
Diode Reverse Recovery Charge** Q
rr
I
E
= 200A – 12.2 – µC
Thermal and Mechanical Characteristics, T
j
= 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Thermal Resistance, Junction to Case R
th(j-c)
QPer IGBT 1/2 Module, T
c
Reference – 0.15 °C/W
Point per Outline Drawing
Thermal Resistance, Junction to Case R
th(j-c)
DPer FWDi 1/2 Module, T
c
Reference – – 0.18 °C/W
Point per Outline Drawing
Thermal Resistance, Junction to Case R
th(j-c)
'Q Per IGBT 1/2 Module, – 0.08 °C/W
T
c
Reference Point Under Chip
Contact Thermal Resistance R
th(c-f)
Per Module, Thermal Grease Applied – 0.020 – °C/W
** Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).