Instruction Manual

1
Trench Gate Design
Dual IGBTMOD™
200 Amperes/1200 Volts
CM200DU-24F
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]
Outline Drawing and Circuit Diagram
Dimensions Inches Millimeters
A 4.25 108.0
B 2.44 62.0
C 1.14 +0.04/-0.02 29.0 +1.0/-0.5
D 3.66±0.01 93.0±0.25
E 1.88±0.01 48.0±0.25
F 0.67 17.0
G 0.16 4.0
H 0.24 6.0
J 0.59 15.0
K 0.55 14.0
Dimensions Inches Millimeters
L 0.87 22.0
M 0.33 8.5
N 0.10 2.5
P 0.85 21.5
Q 0.98 25.0
R 0.11 2.8
SM6 M6
T0.26 Dia. 6.5 Dia.
U 0.02 0.5
V 0.62 15.85
1
Description:
Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module consists
of two IGBT Transistors in a half-
bridge configuration with each tran-
sistor having a reverse-connected
super-fast recovery free-wheel
diode. All components and inter-
connects are isolated from the
heat sinking baseplate, offering
simplified system assembly and
thermal management.
Features:
□ Low Drive Power
□ Low V
CE(sat)
□ Discrete Super-Fast Recovery
Free-Wheel Diode
□ Isolated Baseplate for Easy
Heat Sinking
Applications:
□ AC Motor Control
□ UPS
□ Battery Powered Supplies
Ordering Information:
Example: Select the complete
module number you desire from
the table - i.e. CM200DU-24F is a
1200V (V
CES
), 200 Ampere Dual
IGBTMOD™ Power Module.
Current Rating V
CES
Type Amperes Volts (x 50)
CM 200 24
K
D
C
A
EB
S - NUTS (3 TYP)
CM
KK
L
R
M
J
T (4 TYP.)
PQ
C2E1
Q
E2
C
L
N
C1
F
H
G
H
G1
E1
E2
G2
C2E1
RTC
E2
E1
G1
C1
E2
G2
RTC
T
C
MEASURING
POINT
U
V