User Manual

2
CM150DY-28H
Dual IGBTMOD™ H-Series Module
150 Amperes/1400 Volts
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]
Absolute Maximum Ratings, T
j
= 25 °C unless otherwise specified
Ratings Symbol CM150DY-28H Units
Junction Temperature T
j
–40 to 150 °C
Storage Temperature T
stg
–40 to 125 °C
Collector-Emitter Voltage (G-E SHORT) V
CES
1400 Volts
Gate-Emitter Voltage (C-E SHORT) V
GES
±20 Volts
Collector Current I
C
150 Amperes
Peak Collector Current I
CM
300** Amperes
Emitter Current I
E
* 150 Amperes
Emitter Current-Pulse I
EM
* 300** Amperes
Maximum Collector Dissipation P
c
1100*** Watts
Max. Mounting Torque M5 Terminal Screws – 17 in-lb
Max. Mounting Torque M6 Mounting Screws – 26 in-lb
Module Weight (Typical) – 270 Grams
V Isolation V
RMS
2500 Volts
* I
E
, V
EC
, T
rr
, Q
rr
& di
E
/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi).
** Pulse width and repetition rate should be such that the device junction temp. (T
j
) does not exceed T
j(max)
rating.
*** Junction temperature (T
j
) should not increase beyond 150°C.
Static Electrical Characteristics, T
j
= 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector-Cutoff Current I
CES
V
CE
= V
CES
, V
GE
= 0V – – 1.0 mA
Gate Leakage Current I
GES
V
GE
= V
GES
, V
CE
= 0V – – 0.5 µ A
Gate-Emitter Threshold Voltage V
GE(th)
I
C
= 15mA, V
CE
= 10V 5.0 6.5 8.0 Volts
Collector-Emitter Saturation Voltage V
CE(sat)
I
C
= 150A, V
GE
= 15V – 3.1 4.2* Volts
I
C
= 150A, V
GE
= 15V, T
j
= 125°C – 2.95 – Volts
Total Gate Charge Q
G
V
CC
= 800V, I
C
= 150A, V
GE
= 15V – 765 – nC
* Pulse width and repetition rate should be such that device junction temperature rise is negligible.
Dynamic Electrical Characteristics, T
j
= 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Input Capacitance C
ies
– – 30 nF
Output Capacitance C
oes
V
GE
= 0V, V
CE
= 10V – – 10.5 nF
Reverse Transfer Capacitance C
res
– – 6 nF
ResistiveTurn-on Delay Timet
d(on)
––250 ns
LoadRise Timet
r
V
CC
= 800V, I
C
= 150A,––400 ns
SwitchingTurn-off Delay Timet
d(off)
V
GE1
= V
GE2
= 15V, R
G
= 2.1Ω––300 ns
Times Fall Time t
f
––500ns
Diode Reverse Recovery Timet
rr
I
E
= 150A, di
E
/dt = –300A/ µ s––300ns
Emitter-Collector Voltage V
EC
I
E
= 150A, V
GE
= 0V – – 3.8 V
Diode Reverse Recovery Charge Q
rr
I
E
= 150A, di
E
/dt = –300A/ µ s – 1.5 – µ C
Thermal and Mechanical Characteristics, T
j
= 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Thermal Resistance, Junction to Case R
th(j-c)
Per IGBT – – 0.11 °C/W
Thermal Resistance, Junction to Case R
th(j-c)
Per FWDi – – 0.24 °C/W
Contact Thermal Resistance R
th(c-f)
Per Module, Thermal Grease Applied – – 0.13 °C/W