Owner manual

3
CM150DUS-12F
Trench Gate Design Dual IGBTMOD™
150 Amperes/600 Volts
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]
Thermal and Mechanical Characteristics, T
j
= 25°C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Thermal Resistance, Junction to Case R
th(j-c)
Q Per IGBT 1/2 Module, T
c
Reference – 0.24 °C/W
Point per Outline Drawing
Thermal Resistance, Junction to Case R
th(j-c)
D Per FWDi 1/2 Module, T
c
Reference – – 0.47 °C/W
Point per Outline Drawing
Thermal Resistance, Junction to Case R
th(j-c')
Q Per IGBT 1/2 Module, – – 0.19** °C/W
T
c
Reference Point Under Chip
Contact Thermal Resistance R
th(c-f)
Per Module, Thermal Grease Applied – 0.07 – °C/W
External Gate Resistance R
G
4.2 – 42 Ω
** If you use this value, R
th(f-a)
should be measured just under the chips.
COLLECTOR-CURRENT, I
C
, (AMPERES)
SWITCHING LOSS, E
SW
, (mJ/PULSE)
SWITCHING LOSS VS. COLLECTOR CURRENT
(TYPICAL)
10
1
10
2
10
3
10
0
10
-1
10
1
E
SW(on)
E
SW(off)
COLLECTOR-EMITTER VOLTAGE, V
CE
, (VOLTS)
COLLECTOR CURRENT, I
C
, (AMPERES)
OUTPUT CHARACTERISTICS
(TYPICAL)
0
1 2 3
4
150
50
0
V
GE
= 20V
13
8
8.5
7.5
7
100
250
200
300
9
15
COLLECTOR-CURRENT, I
C
, (AMPERES)
COLLECTOR-EMITTER
SATURATION VOLTAGE,
V
CE(sat)
, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
3.0
0 5
0 100 150 200 250
2.5
2.0
1.5
1.0
0.5
0
300
V
GE
= 15V
T
j
= 25°C
T
j
= 125°C
COLLECTOR-EMITTER VOLTAGE, V
CE
, (VOLTS)
CAPACITANCE, C
ies
, C
oes
, C
res
, (nF)
CAPACITANCE VS. V
CE
(TYPICAL)
10
-1
10
2
10
2
10
1
10
-1
10
0
V
GE
= 0V
f = 1MHz
C
oes
C
res
C
ies
10
0
10
1
0.50 1.51.0 2.0 2.5 3.0
10
0
10
1
10
2
EMITTER-COLLECTOR VOLTAGE,
V
EC
, (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
10
3
EMITTER CURRENT, I
E
, (AMPERES)
T
j
= 25°C
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE, V
CE(sat)
, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
5
6 8 10 1412 1816 20
4
3
2
1
0
T
j
= 25°C
I
C
= 60A
I
C
= 300A
I
C
= 150A
V
CC
= 300V
V
GE
= ±15V
R
G
= 4.2 Ω
T
j
= 125°C
HALF-BRIDGE
SWITCHING
T
j
= 25
o
C
9.5
10
11