User guide

MITSUBISHI HVIGBT MODULES
CM1500HC-66R
HIGH POWER SWITCHING USE
INSULATED TYPE
4
th
-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
PERFORMANCE CURVES
FREE-WHEEL DIODE REVERSE RECOVERY
CHARACTERISTICS (TYPICAL)
0.1
1
10
100
100 1000 10000
Emitter Current [A]
Reverse Recovery Time [µs]
10
100
1000
10000
Reverse Recovery Current [A]
trr
Irr
V
CC
= 1800V, V
GE
= ±15V
R
G(on)
= 1.6Ω, L
S
= 100nH
Tj = 125°C, Inductive load
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) MODULES
HVM-1054-C 8 of 9
0
0.2
0.4
0.6
0.8
1
1.2
0.001 0.01 0.1 1 10
Tim e [s]
Normalized Transient Thermal impedance
Rth(j-c) Q = 8.0K/kW
Rth(j-c) R = 15.0K/kW
FREE-WHEEL DIODE REVERSE RECOVERY
CHARACTERISTICS (TYPICAL)
0.1
1
10
100
100 1000 10000
Emitter Current [A]
Reverse Recovery Time [µs]
10
100
1000
10000
Reverse Recovery Current [A]
trr
Irr
V
CC
= 1800V, V
GE
= ±15V
R
G(on)
= 1.6Ω, L
S
= 100nH
Tj = 150°C, Inductive load
⎪
⎭
⎪
⎬
⎫
⎪
⎩
⎪
⎨
⎧
=
−
∑
⎟
⎟
⎠
⎞
⎜
⎜
⎝
⎛
−
=
−
exp1
RZ
i
t
n
1i
i)cj(th
)t(
τ
1234
R
i
[K/kW] :
0.0096 0.1893 0.4044 0.3967
τ
i
[sec] :
0.0001 0.0058 0.0602 0.3512