User guide

MITSUBISHI HVIGBT MODULES
CM1500HC-66R
HIGH POWER SWITCHING USE
INSULATED TYPE
4
th
-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
PERFORMANCE CURVES
HALF-BRIDGE SWITCHING ENERGY
CHARACTERISTICS (TYPICAL)
0
1
2
3
4
5
6
7
8
024681012
Gate resis tor [Ohm ]
Switching Energies [J/pulse]
Erec
V
CC
= 1800V, I
C
= 1500A
V
GE
= ±15V, L
S
= 100nH
Tj = 125°C, Inductive load
Eon
Eoff
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) MODULES
HVM-1054-C 7 of 9
HALF-BRIDGE SWITCHING TIME
CHARACTERISTICS (TYPICAL)
0.01
0.1
1
10
100
100 1000 10000
Collector Current [A]
Switching Times [µs]
tf
V
CC
= 1800V, V
GE
= ±15V
R
G(on)
= 1.6Ω, R
G(off)
= 5.6Ω
L
S
= 100nH, Tj = 125°C
Inductive load
tr
td( on)
td(off)
HALF-BRIDGE SWITCHING ENERGY
CHARACTERISTICS (TYPICAL)
0
1
2
3
4
5
6
7
8
02468101
Gate resis tor [Ohm ]
Switching Energies [J/pulse]
2
Erec
V
CC
= 1800V, I
C
= 1500A
V
GE
= ±15V, L
S
= 100nH
Tj = 150°C, Inductive load
Eon
Eoff
HALF-BRIDGE SWITCHING TIME
CHARACTERISTICS (TYPICAL)
0.01
0.1
1
10
100
100 1000 10000
Collector Current [A]
Switching Times [µs]
tf
V
CC
= 1800V, V
GE
= ±15V
R
G(on)
= 1.6Ω, R
G(off)
= 5.6Ω
L
S
= 100nH, Tj = 150°C
Inductive load
tr
td( on)
td(off)