User guide

MITSUBISHI HVIGBT MODULES
CM1500HC-66R
HIGH POWER SWITCHING USE
INSULATED TYPE
4
th
-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
PERFORMANCE CURVES
CAPACITANCE CHARACTERISTICS
(TYPICAL)
1
10
100
1000
0.1 1 10 100
Collector-Emitter Voltage [V]
Capacitance [nF]
Cies
V
GE
= 0V, Tj = 25°C
f = 100kHz
Coes
Cres
HALF-BRIDGE SWITCHING ENERGY
CHARACTERISTICS (TYPICAL)
0
1
2
3
4
5
6
7
8
0 500 1000 1500 2000 2500 3000
Collector Current [A]
Switching Energies [J/pulse]
Erec
V
CC
= 1800V, V
GE
= ±15V
R
G(on)
= 1.6Ω, R
G(off)
= 5.6Ω
L
S
= 100nH, Tj = 125°C
Inductive load
Eoff
Eon
GATE CHARGE CHARACTERISTICS
(TYPICAL)
-15
-10
-5
0
5
10
15
20
0 5 10 15 20
Gate Charge [µC]
Gate-Emitter Voltage [V]
V
CE
= 1800V, I
C
= 1500A
Tj = 25°C
HALF-BRIDGE SWITCHING ENERGY
CHARACTERISTICS (TYPICAL)
0
1
2
3
4
5
6
7
8
0 500 1000 1500 2000 2500 3000
Collector Current [A]
Switching Energies [J/pulse]
Erec
V
CC
= 1800V, V
GE
= ±15V
R
G(on)
= 1.6Ω, R
G(off)
= 5.6Ω
L
S
= 100nH, Tj = 150°C
Inductive load
Eoff
Eon
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) MODULES
HVM-1054-C 6 of 9