User guide

MITSUBISHI HVIGBT MODULES
CM1500HC-66R
HIGH POWER SWITCHING USE
4
th
-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules INSULATED TYPE
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) MODULES
PERFORMANCE CURVES
TRANSFER CHARACTERISTICS OUTPUT CHARACTERISTICS
(TYPICAL) (TYPICAL)
0
500
1000
1500
2000
2500
3000
024681012
Gate - Emitter Voltage [V]
Collector Current [A]
Tj = 25°C
V
CE
= V
GE
Tj = 150°C
0
500
1000
1500
2000
2500
3000
0123456
Collector - Emitter Voltage [V]
Collector Current [A]
V
GE
= 9V
V
GE
= 11V
V
GE
= 15V
V
GE
= 13V
Tj = 150°C
V
GE
= 19V
COLLECTOR-EMITTER SATURATION VOLTAGE FREE-WHEEL DIODE FORWARD
CHARACTERISTICS (TYPICAL) CHARACTERISTICS (TYPICAL)
0
500
1000
1500
2000
2500
3000
012345
Collector-Em itter Saturation Voltage [V]
Collector Current [A]
V
GE
= 15V
Tj = 150°C
Tj = 125°C
Tj = 25°C
0
500
1000
1500
2000
2500
3000
012345
Emitter-Collector Voltage [V]
Emitter Current [A]
Tj = 150°C
Tj = 25°C
Tj = 125°C
HVM-1054-C 5 of 9