User guide

MITSUBISHI HVIGBT MODULES
CM1500HC-66R
HIGH POWER SWITCHING USE
4
th
-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules INSULATED TYPE
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) MODULES
HVM-1054-C 4 of 9
THERMAL CHARACTERISTICS
Limits
Symbol Item Conditions
Min Typ Max
Unit
R
th(j-c)Q
Thermal resistance Junction to Case, IGBT part — — 8.0 K/kW
R
th(j-c)R
Thermal resistance Junction to Case, FWDi part — — 15.0 K/kW
R
th(c-f)
Contact thermal resistance Case to Fin, λ
grease
= 1W/m·K, D
(c-f)
= 100 µm — 6.0 — K/kW
MECHANICAL CHARACTERISTICS
Limits
Symbol Item Conditions
Min Typ Max
Unit
M
t
M8: Main terminals screw 7.0 — 22.0 N·m
M
s
M6: Mounting screw 3.0 — 6.0 N·m
M
t
Mounting torque
M4: Auxiliary terminals screw 1.0 — 3.0 N·m
m Mass — 1.2 — kg
CTI Comparative tracking index 600 — — —
d
a
Clearance 19.5 — — mm
d
s
Creepage distance 32.0 — — mm
L
P CE
Parasitic stray inductance — 11.0 — nH
R
CC’+EE’
Internal lead resistance T
c
= 25°C — 0.12 — mΩ
r
g
Internal gate resistor T
c
= 25°C — 1.5 — Ω
Note 1. Pulse width and repetition rate should be such that junction temperature (T
j
) does not exceed T
opmax
rating (150°C).
Note 2. The symbols represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi).
Note 3. Junction temperature (T
j
) should not exceed T
jmax
rating (150°C).
Note 4. Pulse width and repetition rate should be such as to cause negligible temperature rise.
Note 5. E
on(10%)
/ E
off(10%)
/ E
rec(10%)
are the integral of 0.1V
CE
x 0.1I
C
x dt.
Note 6. The integration range of E
on
/ E
off
/ E
rec
according to IEC 60747.