User guide

MITSUBISHI HVIGBT MODULES
CM1500HC-66R
HIGH POWER SWITCHING USE
INSULATED TYPE
4
th
-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
PERFORMANCE CURVES
REVERSE BIAS SAFE OPERATING AREA
(RBSOA)
0
1000
2000
3000
4000
0 1000 2000 3000 4000
Collector-Emitter Voltage [V]
Collector Current [A]
V
CC
≤
2500V, V
GE
= ±15V
Tj = 150°C, R
G(off)
= 5.6Ω
FREE-WHEEL DIODE REVERSE RECOVERY
SAFE OPERATING AREA (RRSOA)
0
1000
2000
3000
4000
0 1000 2000 3000 4000
Emitter-Collector Voltage [V]
Reverse Recovery Current [A]
V
CC
≤
2500V, di/dt < 9kA/µ s
Tj = 150°C
SHORT CIRCUIT
SAFE OPERATING AREA (SCSOA)
0
5
10
15
20
0 1000 2000 3000 4000
Collector-Emitter Voltage [V]
Collector Current [kA]
V
CC
≤
2500V, V
GE
= ±15V
R
G(on)
= 1.6Ω, R
G(off)
= 5.6Ω
Tj = 150°C
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) MODULES
HVM-1054-C 9 of 9