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MITSUBISHI HVIGBT MODULES Prepared by S. Iura Revision: 1.6 Approved by H. Yamaguchi : Apr.
MITSUBISHI HVIGBT MODULES CM1500HC-66R HIGH POWER SWITCHING USE INSULATED TYPE th 4 -Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules MAXIMUM RATINGS Symbol VCES Collector-emitter voltage VGES Gate-emitter voltage IC ICM IE Conditions Item Collector current (Note 2) Pc Maximum power dissipation (Note 3) Viso Isolation voltage Ve Partial discharge extinction voltage IEM Unit VGE = 0V, Tj = −40…+150°C 3300 VGE = 0V, Tj = −50°C 3200 V VCE = 0V, Tj = 25°C ± 20
MITSUBISHI HVIGBT MODULES CM1500HC-66R HIGH POWER SWITCHING USE INSULATED TYPE th 4 -Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules Symbol td(off) tf Eoff(10%) Eoff VEC trr Irr Qrr Erec(10%) Erec Item Min Typ Max Tj = 25°C — 2.70 — Tj = 125°C — 2.80 3.30 Tj = 150°C — 2.85 3.30 Tj = 25°C — 0.30 — Tj = 125°C — 0.35 1.00 VGE = ±15 V Tj = 150°C — 0.40 1.00 RG(off) = 5.6 Ω Tj = 25°C — 2.00 — Tj = 125°C — 2.45 — Tj = 150°C — 2.
MITSUBISHI HVIGBT MODULES CM1500HC-66R th 4 -Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE THERMAL CHARACTERISTICS Symbol Item Conditions Limits Min Typ Max Unit Rth(j-c)Q Thermal resistance Junction to Case, IGBT part — — 8.0 K/kW Rth(j-c)R Thermal resistance Junction to Case, FWDi part — — 15.0 K/kW Rth(c-f) Contact thermal resistance Case to Fin, λgrease = 1W/m·K, D(c-f) = 100 µm — 6.
MITSUBISHI HVIGBT MODULES CM1500HC-66R HIGH POWER SWITCHING USE INSULATED TYPE th 4 -Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules PERFORMANCE CURVES OUTPUT CHARACTERISTICS (TYPICAL) TRANSFER CHARACTERISTICS (TYPICAL) 3000 3000 Tj = 150°C 2500 VGE = 19V VGE = 11V VGE = 15V 2000 VGE = 13V 1500 1000 VGE = 9V Collector Current [A] Collector Current [A] 2500 VCE = VGE 2000 1500 1000 Tj = 25°C Tj = 150°C 500 500 0 0 0 1 2 3 4 5 6 0 Collector - Emitter V
MITSUBISHI HVIGBT MODULES CM1500HC-66R HIGH POWER SWITCHING USE INSULATED TYPE th 4 -Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules PERFORMANCE CURVES CAPACITANCE CHARACTERISTICS (TYPICAL) GATE CHARGE CHARACTERISTICS (TYPICAL) 20 1000 15 Gate-Emitter Voltage [V] Capacitance [nF] Cies 100 Coes 10 VCE = 1800V, IC = 1500A Tj = 25°C Cres 10 5 0 -5 -10 VGE = 0V, Tj = 25°C f = 100kHz 1 -15 0.
MITSUBISHI HVIGBT MODULES CM1500HC-66R HIGH POWER SWITCHING USE INSULATED TYPE th 4 -Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules PERFORMANCE CURVES HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL) HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL) 8 8 VCC = 1800V, IC = 1500A VGE = ±15V, LS = 100nH Tj = 125°C, Inductive load VCC = 1800V, IC = 1500A VGE = ±15V, LS = 100nH Tj = 150°C, Inductive load 7 6 Eon 5 4 Eoff 3 2 Erec Switching Energies [J/pulse] Switc
MITSUBISHI HVIGBT MODULES CM1500HC-66R HIGH POWER SWITCHING USE INSULATED TYPE th 4 -Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules PERFORMANCE CURVES FREE-WHEEL DIODE REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 100 FREE-WHEEL DIODE REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 10000 100 1000 1 100 trr 10 10000 1000 Irr 10 1000 1 trr 0.
MITSUBISHI HVIGBT MODULES CM1500HC-66R HIGH POWER SWITCHING USE INSULATED TYPE th 4 -Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules PERFORMANCE CURVES REVERSE BIAS SAFE OPERATING AREA (RBSOA) SHORT CIRCUIT SAFE OPERATING AREA (SCSOA) 4000 20 VCC ≤ 2500V, VGE = ±15V RG(on) = 1.6Ω, RG(off) = 5.6Ω Tj = 150°C VCC ≤ 2500V, VGE = ±15V Tj = 150°C, RG(off) = 5.
