Owner manual

Jul. 2005
MITSUBISHI HVIGBT MODULES
CM1200HG-66H
HIGH POWER SWITCHING USE
INSULATED TYPE
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
10
-2
10
-3
23 57
10
-1
23 57
10
0
23 57
10
1
23 57
10
3
10
4
10
2
10
1
10
1
10
2
10
0
10
-1
10
2
10
1
23 57
10
3
10
4
23 57 23 57
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
10
1
10
2
10
0
10
-1
10
2
10
1
23 57
10
3
10
4
23 57 23 57
2
3
5
7
2
3
5
7
2
3
5
7
COLLECTOR CURRENT
(
A
)
SWITCHING TIMES
(
µs
)
TIME
(
s
)
HALF-BRIDGE
SWITCHING TIME CHARACTERISTICS
(
TYPICAL
)
EMITTER CURRENT
(
A
)
REVERSE RECOVERY TIME
(
µs
)
FREE-WHEEL DIODE
REVERSE RECOVERY CHARACTERISTICS
(
TYPICAL
)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
NORMALIZED TRANSIENT THERMAL IMPEDANCE
1.2
1.0
0.8
0.6
0.4
0
0.2
REVERSE RECOVERY CURRENT
(
A
)
V CC = 1650V, V GE = ±15V
R
G(on) = R G(off) = 1.6Ω
T
j = 125°C, Inductive load
V CC = 1650V, V GE = ±15V
R
G(on) = R G(off) = 1.6Ω
T
j = 125°C, Inductive load
t d(off)
t d(on)
t r
t f
t rr
I rr
Single Pulse, T C = 25°C
R
th(j–c)Q = 10K/kW
R
th(j–c)R = 20K/kW