Owner manual

Jul. 2005
MITSUBISHI HVIGBT MODULES
CM1200HG-66H
HIGH POWER SWITCHING USE
INSULATED TYPE
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
10
2
10
3
10
1
10
0
10
0
10
-1
23 57
10
1
10
2
23 57 23 57
2
3
5
7
2
3
5
7
2
3
5
7
CAPACITANCE CHARACTERISTICS
(
TYPICAL
)
COLLECTOR-EMITTER VOLTAGE
(
V
)
CAPACITANCE
(
nF
)
GATE CHARGE CHARACTERISTICS
(
TYPICAL
)
GATE CHARGE
(
µC
)
GATE-EMITTER VOLTAGE
(
V
)
COLLECTOR CURRENT
(
A
)
SWITCHING ENERGIES
(
J/pulse
)
HALF-BRIDGE
SWITCHING ENERGY CHARACTERISTICS
(
TYPICAL
)
GATE RESISTANCE
(
Ω
)
SWITCHING ENERGIES
(
J/pulse
)
HALF-BRIDGE
SWITCHING ENERGY CHARACTERISTICS
(
TYPICAL
)
20
16
12
8
4
0
963012
2.5
3
2
1.5
1
0.5
0
1200 16008004000 2000 2400
6
5
4
3
2
0
51001520
1
Cres
Coes
Cies
VGE = 0V, Tj = 25°C
f = 100kHz
VCC = 1650V, VGE = ±15V
R
G(on) = RG(off) = 1.6Ω
Tj = 125°C, Inductive load
VCC = 1650V, IC = 1200A
V
GE = ±15V
Tj = 125°C, Inductive load
Eon
Eoff
Erec
Eon
Eoff
Erec
VCC = 1650V, IC = 1200A
Tj = 25°C