Owner manual

Jul. 2005
MITSUBISHI HVIGBT MODULES
CM1200HG-66H
HIGH POWER SWITCHING USE
INSULATED TYPE
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Rth(j-c)Q
Rth(j-c)R
Rth(c-f)
Junction to Case, IGBT part
Junction to Case, FWDi part
Case to Fin, λ
grease = 1W/m·K
K/kW
K/kW
K/kW
Thermal resistance
Contact thermal resistance
Min Typ Max
10.0
20.0
—
—
—
6.0
—
—
—
THERMAL CHARACTERISTICS
Symbol
Item Conditions
Limits
Unit
M
—
CTI
d
a
ds
LC-E(int)
RC-E(int)
M8 : Main terminals screw
M6 : Mounting screw
M4 : Auxiliary terminals screw
IGBT part
T
C = 25°C
N·m
kg
—
mm
mm
nH
mΩ
Mounting torque
Mass
Comparative tracking index
Clearance distance in air
Creepage distance along surface
Internal inductance
Internal lead resistance
Min Typ Max
15.0
6.0
3.0
—
—
—
—
—
—
—
—
—
1.35
—
—
—
18
0.18
7.0
3.0
1.0
—
600
26.0
56.0
—
—
MECHANICAL CHARACTERISTICS
Symbol
Item Conditions
Limits
Unit