Owner manual

Jul. 2005
MITSUBISHI HVIGBT MODULES
CM1200HG-66H
HIGH POWER SWITCHING USE
INSULATED TYPE
● IC ................................................................ 1200A
● V
CES ....................................................... 3300V
● High Insulated Type
● 1-element in a Pack
● AISiC Baseplate
APPLICATION
Traction drives, High Reliability Converters / Inverters, DC choppers
CM1200HG-66H
OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm
C
G
E
(6)
C
(5)
E
(4)
C
(3)
E
(2)
C
(1)
E
LABEL
6
5
4
3
E
GC
2
1
CIRCUIT DIAGRAM
61.2
±0.5 61.2±0.5
12±0.3
18±0.3
22±0.3
5 - M8 NUTS
17±0.19±0.1
124±0.25
44±0.3
190±0.5
57±0.25 57±0.2557±0.25
140±0.5
41±0.5
8 - φ 7 MOUNTING HOLES
3 - M4 NUTS
14±0.3 59.2±0.5
5±0.15
48
+1.0 0
40.4±0.3
38
+1.0 0
screwing depth
min. 7.7
screwing depth
min. 16.5
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules