Owner manual

Jul. 2005
MITSUBISHI HVIGBT MODULES
CM1200HC-66H
HIGH POWER SWITCHING USE
INSULATED TYPE
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
10
-2
10
-3
23 57
10
-1
23 57
10
0
23 57
10
1
23 57
COLLECTOR CURRENT
(
A
)
SWITCHING TIMES
(
µs
)
TIME
(
s
)
HALF-BRIDGE
SWITCHING TIME CHARACTERISTICS
(
TYPICAL
)
EMITTER CURRENT
(
A
)
REVERSE RECOVERY TIME
(
µs
)
FREE-WHEEL DIODE
REVERSE RECOVERY CHARACTERISTICS
(
TYPICAL
)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
NORMALIZED TRANSIENT THERMAL IMPEDANCE
1.2
1.0
0.8
0.6
0.4
0
0.2
REVERSE RECOVERY CURRENT
(
A
)
10
1
10
2
10
0
10
-1
10
2
10
1
23 57
10
3
10
4
23 57 23 57
2
3
5
7
2
3
5
7
2
3
5
7
10
3
10
4
10
2
10
1
10
1
10
2
10
0
10
-1
10
2
10
1
23 57
10
3
10
4
23 57 23 57
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
Single Pulse, T C = 25°C
R
th(j–c)Q = 8.5K/kW
R
th(j–c)R = 17K/kW
VCC = 1650V, VGE = ±15V
R
G(on) = RG(off) = 1.6Ω
T
j = 125°C, Inductive load
V
CC = 1650V, VGE = ±15V
R
G(on) = RG(off) = 1.6Ω
T
j = 125°C, Inductive load
l
rr
trr
td(off)
td(on)
tf
tr